EP2SGX90EF1152C3ES vs EP2SGX90EF1152C5ES Comparaison
Comparaison détaillée côte à côte de EP2SGX90EF1152C3ES par Intel et EP2SGX90EF1152C5ES par Intel. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Intel
EP2SGX90EF1152C3ES - Stratix II GX FPGA 90nm 558 I/O 1152-BBGA | Intel
EP2SGX90EF1152C3ES ⚠ Dernier achatIntel
EP2SGX90EF1152C5ES - Stratix II GX FPGA, 90K LEs, 1152-FBGA | Intel
EP2SGX90EF1152C5ES ObsoleteComparaison des spécifications
| Paramètre | EP2SGX90EF1152C3ES | EP2SGX90EF1152C5ES |
|---|---|---|
| Marque | Intel | Intel |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Dernier achat | Obsolete |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $2 050,00 | $1 495,00 |
| Family | Stratix II GX | Stratix II GX |
| Process Node | 90 nm | — |
| Logic Elements | 90,960 | 90,960 |
| Embedded Memory | 4,520,448 bits (approx. 4.5 Mbit) | — |
| User I/O Pins | 558 | — |
| Boîtier | 1152-BBGA (FineLine BGA, 35x35 mm) | 1152-FBGA (FineLine BGA) |
| Speed Grade | C3 | C5 (commercial, mid-tier) |
| Temperature Grade | Commercial Extended (-40 C to +100 C) | — |
| Core Voltage | 1.5 V (Enhanced, 'E' suffix) | 1.2 V (typical) |
| High-Speed Transceivers | Up to 12 channels (per Stratix II GX family) | — |
| Transceiver Data Rate | Up to 6.375 Gbps per channel (family spec) | Up to 6.375 Gbps |
| DSP Blocks | Yes, dedicated 18x18 multipliers and accumulators | — |
| PLL Count | [DATA_NEEDED: PLL count for EP2SGX90 variant] | — |
| User I/O Banks | 24 (per package datasheet) | — |
| Configuration | SRAM-based, supports Fast Passive Parallel, Fast Active Serial, JTAG | — |
| Type de montage | Surface Mount (BGA) | — |
| Statut RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Embedded Memory (bits) | — | 4,520,448 |
| User I/Os | — | 558 |
| Number of Transceivers | — | 12 (up to 20 channels) |
| DSP Blocks (18x18 multipliers) | — | 384 |
| Température de fonctionnement | — | 0C to +85C (commercial) |
| Process Technology | — | 90 nm CMOS |
| Configuration Method | — | Fast passive parallel, active serial, JTAG |