EP3C16E144C7 vs EP3C16E144C8N Vergleich

Detaillierter Direktvergleich von EP3C16E144C7 von Intel und EP3C16E144C8N von Intel. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter EP3C16E144C7 EP3C16E144C8N
Marke Intel Intel
Kategorie FPGA & CPLD FPGA & CPLD
Lebenszyklusstatus Aktiv Aktiv
Device Type Cyclone III Field Programmable Gate Array (FPGA) —
User I/O Count 84 I/O —
Reported Embedded Memory 516096 bit —
Additional Reported Device Data 15408; parameter definition [DATA_NEEDED: definition of the reported 15408 value] —
Gehäuse 144-LQFP Exposed Pad 144-LQFP Exposed Pad (EQFP-144)
Number of Terminals 144 terminals —
Package Code LFQFP —
Package Shape Square —
Terminal Form Gull wing —
Montageart Surface mount Surface Mount
Logic Elements [DATA_NEEDED: logic element count] —
Core Supply Voltage [DATA_NEEDED: core supply voltage] —
I/O Supply Voltage [DATA_NEEDED: I/O supply voltage] —
Betriebstemperaturbereich [DATA_NEEDED: operating temperature range] —
Exposed Pad Dimensions [DATA_NEEDED: exposed pad dimensions] —
Package Dimensions [DATA_NEEDED: package body dimensions] —
RoHS-Status [DATA_NEEDED: RoHS status] Compliant
REACH Status [DATA_NEEDED: REACH status] —
AEC-Q100 Qualification [DATA_NEEDED: AEC-Q100 qualification status] —
Family — Cyclone III
Logic Elements (LEs) — 15,408
Total Memory Bits — 516,096 bits (63 Kbytes)
Embedded Memory Blocks — M9K
Embedded 18x18 Multipliers — 56
User I/O Pins — 84
Phase-Locked Loops (PLLs) — 4
Process Technology — 65 nm
Core Voltage — 1.2 V
Operating Temperature (Commercial) — 0C to +85C
Speed Grade — C8
Configuration Memory — SRAM-based (volatile)

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