EP3C40F780I8N vs EP3C40F780C8 Vergleich

Detaillierter Direktvergleich von EP3C40F780I8N von Intel und EP3C40F780C8 von Intel. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter EP3C40F780I8N EP3C40F780C8
Marke Intel Intel
Kategorie FPGA & CPLD FPGA & CPLD
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $192,00 $99,95
Family Cyclone III Cyclone III
Device Logic Elements 39,600 —
Logic Array Blocks (LABs/CLBs) 2,475 —
Embedded Memory (bits) 1,161,216 —
Embedded Memory (Kbits) 1,134 —
Embedded Multipliers (18x18) 126 —
Number of PLLs 4 —
User I/O Pins 535 —
I/O Banks 20 —
Nominal Core Supply Voltage 1.2 V (1.15 V to 1.25 V) —
Gehäuse 780-ball FBGA (F780) 780-ball FBGA (FineLine BGA)
Package Ball Pitch 1.0 mm —
Process Technology TSMC 65 nm low-power CMOS 65 nm low-power CMOS
Operating Temperature Grade Industrial (-40 °C to +100 °C junction) —
Configuration Modes Passive Serial, Active Serial (EPCS), JTAG, Fast Passive Parallel —
RoHS-Status Compliant Compliant
MSL-Level 3 —
Montageart Surface Mount (BGA) Surface Mount (BGA)
Series — EP3C40
Logic Elements — 39,600
Total Memory Bits — 1,161,216 bits (1134 Kbit)
Embedded Memory — M9K blocks, 486 Kbit total (per family datasheet)
Embedded 18x18 Multipliers — 126
General Purpose PLLs — 4
Global Clock Networks — 20
Maximum User I/O Pins — 535
Speed Grade — C8 (commercial, -40C to +85C operating range per 'C' designator family convention)
User I/O Banks — [DATA_NEEDED: user I/O bank count]
Supported Memory Interfaces — DDR, DDR2, QDRII SRAM (via dedicated PHY)
Configuration — Serial (AS) / Parallel (AP) / JTAG

Datenblätter & Ressourcen

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