EP3SE110F1152I4 vs EP3SE110F1152I2N Vergleich

Detaillierter Direktvergleich von EP3SE110F1152I4 von Intel und EP3SE110F1152I2N von Intel. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter EP3SE110F1152I4 EP3SE110F1152I2N
Marke Intel Intel
Kategorie FPGA & CPLD FPGA & CPLD
Lebenszyklusstatus Obsolete Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1.020,00 $1.480,00
Family Stratix III E Stratix III
Logic Elements (LE) 107,500 107,500
Logic Array Blocks (LABs) 4300 —
DSP Blocks 744 —
Embedded Memory (bits) 8,936,448 —
User I/Os 744 —
Gehäuse 1152-ball FCBGA (Flip-Chip BGA) —
Betriebstemperatur -40°C to +100°C (Industrial) -40C to +100C (industrial)
Process Node 40 nm —
Maximum User I/O Speed [DATA_NEEDED: maximum I/O toggle rate MHz] —
PLLs 24 —
Configuration Modes JTAG, Passive Serial (PS), Fast Passive Parallel (FPP), Active Serial (AS) —
Memory Interface Support DDR3, DDR2, QDRII+, RLDRAM II —
Transceiver Protocol Support PCIe Gen1/Gen2, Gbit Ethernet, XAUI, Serial RapidIO —
RoHS-Status Compliant —
Lead-Free Yes —
Montageart Surface Mount (BGA) Surface Mount
MSL-Level [DATA_NEEDED: MSL rating] —
Series — Stratix III Enhanced (EP3SE110)
Logic Array Blocks (LABs) / CLBs — 4,300
System Gates — 8,936,448
User I/O Pins — 744
Number of Terminals — 1,152
Package Code — BGA (FCBGA)
Package Shape — Square
Ball Pitch — 1.00 mm
Supply Voltage Range — 1.05 V to 1.15 V (nominal 1.1 V)
Process Technology — 40 nm low-power CMOS
Maximum Internal Clock Frequency — 100 MHz (per distributor summary; device supports multi-Gbps transceivers)
Speed Grade — I2
Lead-Free / RoHS — Yes (suffix N)

Datenblätter & Ressourcen

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