EP3SE260H780C4LN vs EP3SE260H780C4LG Vergleich
Detaillierter Direktvergleich von EP3SE260H780C4LN von Intel und EP3SE260H780C4LG von Altera. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Intel
EP3SE260H780C4LN - Stratix III E FPGA 255K LE 780-FCBGA | Intel
EP3SE260H780C4LN ⚠ Letzte Bestellmöglichkeit
Spezifikationsvergleich
| Parameter | EP3SE260H780C4LN | EP3SE260H780C4LG |
|---|---|---|
| Marke | Intel | Altera |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | Letzte Kaufgelegenheit | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $11.950,00 | $1.290,00 |
| Family | Stratix III E | Stratix III Enhanced (EP3SE) |
| Logic Elements | 255,000 | 254,400 |
| Embedded Memory | 16,672,768 bits (16.67 Mbit) | — |
| Logic Array Blocks (LABs) | 10,200 | — |
| Embedded Multipliers (18x18) | 384 | — |
| User I/O Count | 488 | — |
| Gehäuse | 780-ball FCBGA (FineLine BGA) | 780-ball FineLine BGA (HBGA, 29 mm x 29 mm, 1.0 mm pitch) |
| Speed Grade | C4 (commercial, moderate speed) | C4 (commercial, mid-speed tier) |
| Betriebstemperatur | 0C to +85C (commercial) | — |
| Core Voltage (VCC) | 1.0 V | — |
| I/O Voltage (VCCIO) | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V (bank-dependent) | — |
| Auxiliary Voltage (VCCPD/VCCPT) | 2.5 V / 3.0 V | — |
| PLLs | 8 | — |
| Global Clock Networks | 16 | — |
| Process Node | 40 nm TSMC | — |
| Configuration Modes | FPP, AS, PS, JTAG | — |
| RoHS-Status | Compliant | Compliant (Pb-free HBGA) |
| MSL-Level | 3 (168 hours) | 3 (per JEDEC J-STD-020) |
| Adaptive Logic Modules (ALMs) | — | 101,760 |
| Embedded Memory (M9K + M144K) | — | 18.36 Mbits |
| DSP Blocks (18-bit x 18-bit) | — | 768 |
| 18-bit x 18-bit Multipliers | — | 1,536 |
| Transceivers (full-duplex) | — | 8 (up to 6.375 Gbps) |
| Maximum User I/O Pins | — | 488 |
| Temperature Grade | — | Commercial (0C to +85C junction) |
| Process Technology | — | 65 nm TSMC low-power CMOS |
| Operating Voltage (Core) | — | 0.9 V / 1.0 V / 1.1 V (programmable) |
| External Memory Interface | — | Up to 800 Mbps DDR3, QDR II+, RLDRAM II |
| Hard IP Blocks | — | PCIe Gen2, 10GbE MAC, memory controllers |
| Montageart | — | Surface Mount (BGA) |