EP3SE260H780C4LN vs EP3SE260H780C4LG Comparison
Detailed side-by-side comparison of EP3SE260H780C4LN by Intel and EP3SE260H780C4LG by Altera. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Intel
EP3SE260H780C4LN - Stratix III E FPGA 255K LE 780-FCBGA | Intel
EP3SE260H780C4LN β Last Time BuyAltera
EP3SE260H780C4LG - Stratix III E FPGA, 488 I/O, 780-HBGA | Altera
EP3SE260H780C4LG β ActiveSpecification Comparison
| Parameter | EP3SE260H780C4LN | EP3SE260H780C4LG |
|---|---|---|
| Brand | Intel | Altera |
| Category | FPGA & CPLD | FPGA & CPLD |
| Lifecycle Status | Last_time_buy | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $11,950.00 | $1,290.00 |
| Family | Stratix III E | Stratix III Enhanced (EP3SE) |
| Logic Elements | 255,000 | 254,400 |
| Embedded Memory | 16,672,768 bits (16.67 Mbit) | β |
| Logic Array Blocks (LABs) | 10,200 | β |
| Embedded Multipliers (18x18) | 384 | β |
| User I/O Count | 488 | β |
| Package | 780-ball FCBGA (FineLine BGA) | 780-ball FineLine BGA (HBGA, 29 mm x 29 mm, 1.0 mm pitch) |
| Speed Grade | C4 (commercial, moderate speed) | C4 (commercial, mid-speed tier) |
| Operating Temperature | 0C to +85C (commercial) | β |
| Core Voltage (VCC) | 1.0 V | β |
| I/O Voltage (VCCIO) | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V (bank-dependent) | β |
| Auxiliary Voltage (VCCPD/VCCPT) | 2.5 V / 3.0 V | β |
| PLLs | 8 | β |
| Global Clock Networks | 16 | β |
| Process Node | 40 nm TSMC | β |
| Configuration Modes | FPP, AS, PS, JTAG | β |
| RoHS Status | Compliant | Compliant (Pb-free HBGA) |
| MSL Level | 3 (168 hours) | 3 (per JEDEC J-STD-020) |
| Adaptive Logic Modules (ALMs) | β | 101,760 |
| Embedded Memory (M9K + M144K) | β | 18.36 Mbits |
| DSP Blocks (18-bit x 18-bit) | β | 768 |
| 18-bit x 18-bit Multipliers | β | 1,536 |
| Transceivers (full-duplex) | β | 8 (up to 6.375 Gbps) |
| Maximum User I/O Pins | β | 488 |
| Temperature Grade | β | Commercial (0C to +85C junction) |
| Process Technology | β | 65 nm TSMC low-power CMOS |
| Operating Voltage (Core) | β | 0.9 V / 1.0 V / 1.1 V (programmable) |
| External Memory Interface | β | Up to 800 Mbps DDR3, QDR II+, RLDRAM II |
| Hard IP Blocks | β | PCIe Gen2, 10GbE MAC, memory controllers |
| Mounting Type | β | Surface Mount (BGA) |