EP3SE260H780C4LN vs EP3SE260H780C4LG Comparaison
Comparaison détaillée côte à côte de EP3SE260H780C4LN par Intel et EP3SE260H780C4LG par Altera. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Intel
EP3SE260H780C4LN - Stratix III E FPGA 255K LE 780-FCBGA | Intel
EP3SE260H780C4LN ⚠ Dernier achat
Comparaison des spécifications
| Paramètre | EP3SE260H780C4LN | EP3SE260H780C4LG |
|---|---|---|
| Marque | Intel | Altera |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Dernier achat | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $11 950,00 | $1 290,00 |
| Family | Stratix III E | Stratix III Enhanced (EP3SE) |
| Logic Elements | 255,000 | 254,400 |
| Embedded Memory | 16,672,768 bits (16.67 Mbit) | — |
| Logic Array Blocks (LABs) | 10,200 | — |
| Embedded Multipliers (18x18) | 384 | — |
| User I/O Count | 488 | — |
| Boîtier | 780-ball FCBGA (FineLine BGA) | 780-ball FineLine BGA (HBGA, 29 mm x 29 mm, 1.0 mm pitch) |
| Speed Grade | C4 (commercial, moderate speed) | C4 (commercial, mid-speed tier) |
| Température de fonctionnement | 0C to +85C (commercial) | — |
| Core Voltage (VCC) | 1.0 V | — |
| I/O Voltage (VCCIO) | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V (bank-dependent) | — |
| Auxiliary Voltage (VCCPD/VCCPT) | 2.5 V / 3.0 V | — |
| PLLs | 8 | — |
| Global Clock Networks | 16 | — |
| Process Node | 40 nm TSMC | — |
| Configuration Modes | FPP, AS, PS, JTAG | — |
| Statut RoHS | Compliant | Compliant (Pb-free HBGA) |
| Niveau MSL | 3 (168 hours) | 3 (per JEDEC J-STD-020) |
| Adaptive Logic Modules (ALMs) | — | 101,760 |
| Embedded Memory (M9K + M144K) | — | 18.36 Mbits |
| DSP Blocks (18-bit x 18-bit) | — | 768 |
| 18-bit x 18-bit Multipliers | — | 1,536 |
| Transceivers (full-duplex) | — | 8 (up to 6.375 Gbps) |
| Maximum User I/O Pins | — | 488 |
| Temperature Grade | — | Commercial (0C to +85C junction) |
| Process Technology | — | 65 nm TSMC low-power CMOS |
| Operating Voltage (Core) | — | 0.9 V / 1.0 V / 1.1 V (programmable) |
| External Memory Interface | — | Up to 800 Mbps DDR3, QDR II+, RLDRAM II |
| Hard IP Blocks | — | PCIe Gen2, 10GbE MAC, memory controllers |
| Type de montage | — | Surface Mount (BGA) |