EP4CE15E22C8N vs EP4CE15F23C8N Vergleich
Detaillierter Direktvergleich von EP4CE15E22C8N von Intel und EP4CE15F23C8N von Intel. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | EP4CE15E22C8N | EP4CE15F23C8N |
|---|---|---|
| Marke | Intel | Intel |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $15,95 | $33,10 |
| Series | Cyclone IV E | Cyclone IV E |
| Logic Elements (LEs) | 15,408 | — |
| Embedded Memory (Bits) | 516,096 | — |
| Embedded Memory (Kbits) | 504 | — |
| Embedded 18x18 Multipliers | 56 | — |
| General Purpose PLLs | 4 | — |
| User I/O Pins | 81 | — |
| Core Voltage | 1.2 V | — |
| Betriebstemperatur | 0C to +85C (Commercial) | 0C to 85C (Commercial) |
| Speed Grade | 8 | C8 (commercial, 8 ns internal timing) |
| Gehäuse | 144-pin EQFP (Enhanced QFP) with Exposed Pad | 484-BGA (FineLine BGA, F23, 23x23 mm, 1.0 mm pitch) |
| Montageart | Surface Mount | Surface Mount (BGA) |
| MSL-Level | 3 | MSL3 (per JEDEC J-STD-020) |
| RoHS-Status | Compliant | Compliant |
| Process Technology | 60 nm low-power CMOS | 60 nm low-leakage CMOS |
| Configuration Method | SRAM-based, AS / PS / JTAG | — |
| Logic Elements | — | 15,408 |
| Embedded Memory Bits | — | 516,096 bits (63 KBytes) |
| Embedded Multipliers (18x18) | — | 343 |
| General-purpose PLLs | — | 4 |
| Maximum User I/O Pins | — | 343 |
| Core Voltage (VCCINT) | — | 1.0 V to 1.2 V |
| I/O Bank Voltage (VCCIO) | — | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V |
| Configuration Modes | — | AS / PS / JTAG / FPP |
| Hard IP Blocks | — | PCIe Gen1 root port, external memory interface |
| Embedded Memory Type | — | M9K (9 Kbit each) |