EP4CE15E22C8N vs EP4CE15F23C8N 对比
详细并排对比 EP4CE15E22C8N 出自 Intel 和 EP4CE15F23C8N 出自 Intel。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | EP4CE15E22C8N | EP4CE15F23C8N |
|---|---|---|
| 品牌 | Intel | Intel |
| 分类 | FPGA & CPLD | FPGA & CPLD |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $15.95 | $33.10 |
| Series | Cyclone IV E | Cyclone IV E |
| Logic Elements (LEs) | 15,408 | — |
| Embedded Memory (Bits) | 516,096 | — |
| Embedded Memory (Kbits) | 504 | — |
| Embedded 18x18 Multipliers | 56 | — |
| General Purpose PLLs | 4 | — |
| User I/O Pins | 81 | — |
| Core Voltage | 1.2 V | — |
| 工作温度 | 0C to +85C (Commercial) | 0C to 85C (Commercial) |
| Speed Grade | 8 | C8 (commercial, 8 ns internal timing) |
| 封装 | 144-pin EQFP (Enhanced QFP) with Exposed Pad | 484-BGA (FineLine BGA, F23, 23x23 mm, 1.0 mm pitch) |
| 安装类型 | Surface Mount | Surface Mount (BGA) |
| MSL 等级 | 3 | MSL3 (per JEDEC J-STD-020) |
| RoHS 状态 | Compliant | Compliant |
| Process Technology | 60 nm low-power CMOS | 60 nm low-leakage CMOS |
| Configuration Method | SRAM-based, AS / PS / JTAG | — |
| Logic Elements | — | 15,408 |
| Embedded Memory Bits | — | 516,096 bits (63 KBytes) |
| Embedded Multipliers (18x18) | — | 343 |
| General-purpose PLLs | — | 4 |
| Maximum User I/O Pins | — | 343 |
| Core Voltage (VCCINT) | — | 1.0 V to 1.2 V |
| I/O Bank Voltage (VCCIO) | — | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V |
| Configuration Modes | — | AS / PS / JTAG / FPP |
| Hard IP Blocks | — | PCIe Gen1 root port, external memory interface |
| Embedded Memory Type | — | M9K (9 Kbit each) |