EP4CE15F1717N vs EP4CE10E22C8N Vergleich
Detaillierter Direktvergleich von EP4CE15F1717N von Intel und EP4CE10E22C8N von Intel. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | EP4CE15F1717N | EP4CE10E22C8N |
|---|---|---|
| Marke | Intel | Intel |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $35,20 | $11,10 |
| Series | Cyclone IV E | Cyclone IV E |
| Logic Elements (LE) | 15,408 | 10,320 |
| Embedded Memory | 516,096 bits (56 M9K blocks) | — |
| Embedded 18x18 Multipliers | 56 | — |
| Maximum User I/Os | 165 | — |
| PLLs | 4 | — |
| Global Clock Networks | 20 | — |
| Process Technology | 60 nm low-power | 60 nm low-power |
| Core Voltage (VCCINT) | 1.0 V / 1.2 V | — |
| I/O Voltage (VCCIO) | 1.2 V / 1.8 V / 2.5 V / 3.0 V / 3.3 V | — |
| Betriebstemperatur | 0C to +85C (commercial "N" suffix) | 0C to +85C |
| Gehäuse | 256-ball F-BGA (FBGA-256) | 144-LQFP Exposed Pad (E22) |
| Package Pitch | 1.0 mm | — |
| LVDS Performance | Up to 343 Mbps | — |
| Speed Grade | 7 | 8 |
| Configuration Mode | External serial/parallel flash (volatile SRAM) | JTAG / AS / AP / PS |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 3 (168 hours) | — |
| Family | — | EP4CE10 |
| Embedded Memory (M9K blocks) | — | 46 |
| Embedded Memory (total) | — | 414 Kbit |
| Maximum User I/O | — | 91 |
| Anzahl der Pins | — | 144 |
| Temperature Grade | — | Commercial (C) |
| PLL Count | — | 2 |
| Supply Voltage (Core) | — | 1.0 V to 1.2 V |
| Montageart | — | Surface Mount |
| Lead-Free | — | Yes |