EP4CE15F1717N vs EP4CE10E22C8N 对比
详细并排对比 EP4CE15F1717N 出自 Intel 和 EP4CE10E22C8N 出自 Intel。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | EP4CE15F1717N | EP4CE10E22C8N |
|---|---|---|
| 品牌 | Intel | Intel |
| 分类 | FPGA & CPLD | FPGA & CPLD |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $35.20 | $11.10 |
| Series | Cyclone IV E | Cyclone IV E |
| Logic Elements (LE) | 15,408 | 10,320 |
| Embedded Memory | 516,096 bits (56 M9K blocks) | — |
| Embedded 18x18 Multipliers | 56 | — |
| Maximum User I/Os | 165 | — |
| PLLs | 4 | — |
| Global Clock Networks | 20 | — |
| Process Technology | 60 nm low-power | 60 nm low-power |
| Core Voltage (VCCINT) | 1.0 V / 1.2 V | — |
| I/O Voltage (VCCIO) | 1.2 V / 1.8 V / 2.5 V / 3.0 V / 3.3 V | — |
| 工作温度 | 0C to +85C (commercial "N" suffix) | 0C to +85C |
| 封装 | 256-ball F-BGA (FBGA-256) | 144-LQFP Exposed Pad (E22) |
| Package Pitch | 1.0 mm | — |
| LVDS Performance | Up to 343 Mbps | — |
| Speed Grade | 7 | 8 |
| Configuration Mode | External serial/parallel flash (volatile SRAM) | JTAG / AS / AP / PS |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | 3 (168 hours) | — |
| Family | — | EP4CE10 |
| Embedded Memory (M9K blocks) | — | 46 |
| Embedded Memory (total) | — | 414 Kbit |
| Maximum User I/O | — | 91 |
| 引脚数 | — | 144 |
| Temperature Grade | — | Commercial (C) |
| PLL Count | — | 2 |
| Supply Voltage (Core) | — | 1.0 V to 1.2 V |
| 安装类型 | — | Surface Mount |
| Lead-Free | — | Yes |