EP4CE15F23C8 vs EP4CE15F23C8N Vergleich
Detaillierter Direktvergleich von EP4CE15F23C8 von Intel und EP4CE15F23C8N von Intel. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | EP4CE15F23C8 | EP4CE15F23C8N |
|---|---|---|
| Marke | Intel | Intel |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Family | Cyclone IV E | — |
| Device | EP4CE15 | — |
| Logic Elements (LE) | 15,408 | — |
| Embedded Memory (bits) | 516,096 | — |
| M9K Memory Blocks | 112 | — |
| Embedded Multipliers (18x18) | 112 | 343 |
| User I/O Pins (max) | 343 | — |
| PLLs | 4 | — |
| Global Clock Networks | 8 | — |
| Gehäuse | 484-FBGA (F23, 23x23 mm, 1.0 mm pitch) | 484-BGA (FineLine BGA, F23, 23x23 mm, 1.0 mm pitch) |
| Core Voltage | 1.2 V | — |
| Betriebstemperatur | 0 C to +85 C (commercial, C8 speed grade) | 0C to 85C (Commercial) |
| Speed Grade | 8 (C8 = commercial, -8 speed) | C8 (commercial, 8 ns internal timing) |
| Configuration Modes | JTAG, AS, PS, FPP | AS / PS / JTAG / FPP |
| RoHS-Status | Compliant | Compliant |
| Process Technology | 60 nm low-power | 60 nm low-leakage CMOS |
| LVDS Data Rate (max) | 840 Mbps | — |
| Series | — | Cyclone IV E |
| Logic Elements | — | 15,408 |
| Embedded Memory Bits | — | 516,096 bits (63 KBytes) |
| General-purpose PLLs | — | 4 |
| Maximum User I/O Pins | — | 343 |
| Core Voltage (VCCINT) | — | 1.0 V to 1.2 V |
| I/O Bank Voltage (VCCIO) | — | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V |
| Montageart | — | Surface Mount (BGA) |
| MSL-Level | — | MSL3 (per JEDEC J-STD-020) |
| Hard IP Blocks | — | PCIe Gen1 root port, external memory interface |
| Embedded Memory Type | — | M9K (9 Kbit each) |