EP4CE6E22A7N vs EP4CE6E22C7 Vergleich
Detaillierter Direktvergleich von EP4CE6E22A7N von Intel und EP4CE6E22C7 von Intel. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | EP4CE6E22A7N | EP4CE6E22C7 |
|---|---|---|
| Marke | Intel | Intel |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $17,40 | $11,20 |
| Series | Cyclone IV E | Cyclone IV E |
| Logic Elements | 6,272 | — |
| Embedded Memory (bits) | 276,480 | — |
| Embedded Multipliers (18x18) | 15 | — |
| User I/O Pins | 91 | — |
| Number of I/O Banks | 4 | — |
| Number of PLLs | 2 | 4 |
| Global Clock Networks | 10 | — |
| Process Node | 60 nm low power | — |
| Core Voltage | 1.2 V | — |
| Operating Temperature Grade | Automotive A7 (-40C to +125C junction) | — |
| Package Type | 144-pin EQFP (E22) with exposed pad | — |
| Configuration Modes | JTAG, AS, PS, FPP | JTAG, Active Serial (AS), Passive Serial (PS) |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | Compliant |
| Family | — | Cyclone IV |
| Core Architecture | — | Logic Elements (LE) |
| Number of Logic Elements (LEs) | — | 6,272 |
| Number of Logic Array Blocks (LABs) | — | [DATA_NEEDED: LAB count] |
| Number of Configurable Logic Blocks (CLBs) | — | 392 |
| Total Embedded Memory Bits | — | 276,480 |
| Total RAM (Kbits) | — | 270 |
| Number of Embedded 18x18 Multipliers | — | 15 |
| User I/O Count | — | 91 |
| I/O Standards Supported | — | LVDS, LVCMOS, LVTTL, SSTL, HSTL, PCI |
| Operating Supply Voltage (Core) | — | 1.0 V to 1.2 V (typ. 1.2 V) |
| Operating Supply Voltage (I/O) | — | 1.2 V to 3.3 V |
| Logic Speed Grade | — | C7 |
| Operating Temperature Range (Commercial) | — | 0°C to +85°C (junction) |
| Gehäuse | — | 144-LQFP Exposed Pad (EQFP-144), 22 x 22 mm, 0.5 mm pitch |
| Process Technology | — | 60 nm low-power CMOS |