EP4CE6E22A7N vs EP4CE6E22C7 Comparaison
Comparaison détaillée côte à côte de EP4CE6E22A7N par Intel et EP4CE6E22C7 par Intel. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | EP4CE6E22A7N | EP4CE6E22C7 |
|---|---|---|
| Marque | Intel | Intel |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $17,40 | $11,20 |
| Series | Cyclone IV E | Cyclone IV E |
| Logic Elements | 6,272 | — |
| Embedded Memory (bits) | 276,480 | — |
| Embedded Multipliers (18x18) | 15 | — |
| User I/O Pins | 91 | — |
| Number of I/O Banks | 4 | — |
| Number of PLLs | 2 | 4 |
| Global Clock Networks | 10 | — |
| Process Node | 60 nm low power | — |
| Core Voltage | 1.2 V | — |
| Operating Temperature Grade | Automotive A7 (-40C to +125C junction) | — |
| Package Type | 144-pin EQFP (E22) with exposed pad | — |
| Configuration Modes | JTAG, AS, PS, FPP | JTAG, Active Serial (AS), Passive Serial (PS) |
| Type de montage | Surface Mount | Surface Mount |
| Statut RoHS | Compliant | Compliant |
| Family | — | Cyclone IV |
| Core Architecture | — | Logic Elements (LE) |
| Number of Logic Elements (LEs) | — | 6,272 |
| Number of Logic Array Blocks (LABs) | — | [DATA_NEEDED: LAB count] |
| Number of Configurable Logic Blocks (CLBs) | — | 392 |
| Total Embedded Memory Bits | — | 276,480 |
| Total RAM (Kbits) | — | 270 |
| Number of Embedded 18x18 Multipliers | — | 15 |
| User I/O Count | — | 91 |
| I/O Standards Supported | — | LVDS, LVCMOS, LVTTL, SSTL, HSTL, PCI |
| Operating Supply Voltage (Core) | — | 1.0 V to 1.2 V (typ. 1.2 V) |
| Operating Supply Voltage (I/O) | — | 1.2 V to 3.3 V |
| Logic Speed Grade | — | C7 |
| Operating Temperature Range (Commercial) | — | 0°C to +85°C (junction) |
| Boîtier | — | 144-LQFP Exposed Pad (EQFP-144), 22 x 22 mm, 0.5 mm pitch |
| Process Technology | — | 60 nm low-power CMOS |