EPF10K100EFC484-3N vs EPF10K130EFC484-3 Vergleich
Detaillierter Direktvergleich von EPF10K100EFC484-3N von Intel und EPF10K130EFC484-3 von Intel. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | EPF10K100EFC484-3N | EPF10K130EFC484-3 |
|---|---|---|
| Marke | Intel | Intel |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | Obsolete | NRND |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $142,00 | $178,92 |
| Family | FLEX 10KE | FLEX 10KE |
| Logic Elements / Cells | 4992 | — |
| Total Gates | 100,000 | — |
| Embedded Memory (EAB) | 49,152 bits (12 EABs) | — |
| Logic Array Blocks (LABs) | 624 | 832 |
| User I/Os | 338 | — |
| Process Technology | 0.22 µm CMOS | — |
| Core Voltage (VCCINT) | 2.5 V | — |
| I/O Voltage (VCCIO) | MultiVolt (2.5 V / 3.3 V / 5.0 V tolerant per bank) | — |
| Internal Performance | 200 MHz | — |
| Speed Grade | -3 (fastest commercial bin) | -3 |
| Gehäuse | 484-ball FineLine BGA (FC484 / FBGA-484) | 484-pin FBGA (FineLine BGA) |
| Temperature Grade | Commercial (0 °C to +70 °C) | — |
| Configuration Method | SRAM (external EPROM/Flash/JTAG required at power-up) | SRAM-based, serial or parallel, requires external configuration device |
| Lead-Free / RoHS | Yes (N suffix = lead-free) | — |
| Montageart | Surface Mount (BGA) | Surface Mount (BGA) |
| Logic Elements (LEs) | — | 6,656 |
| Typical Gate Count | — | 130,000 system gates |
| Embedded Memory (EABs) | — | 16 x 4,096 bits (65,536 bits total) |
| Maximum User I/O | — | 369 |
| Supply Voltage (Core) | — | 3.3 V |
| I/O Voltage Support | — | 5.0 V / 3.3 V / 2.5 V (multi-volt I/O) |
| Propagation Delay | — | 0.6 ns (per LE) |
| Betriebstemperatur | — | 0 C to +70 C (commercial) |
| RoHS-Status | — | [DATA_NEEDED: RoHS status] |
| Logic Family | — | CMOS (SRAM-based) |