EPF6010ANTC100-2 vs EPF6010ATC100-3N Vergleich
Detaillierter Direktvergleich von EPF6010ANTC100-2 von Intel und EPF6010ATC100-3N von Intel. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Intel
EPF6010ANTC100-2 - FLEX 6000 FPGA, 880 LEs, 71 I/O, 100-TQFP | Intel
EPF6010ANTC100-2 ⚠ Letzte BestellmöglichkeitIntel
EPF6010ATC100-3N - FLEX 6000 FPGA, 880 Cells, 100-TQFP | Intel
EPF6010ATC100-3N ⚠ Letzte BestellmöglichkeitSpezifikationsvergleich
| Parameter | EPF6010ANTC100-2 | EPF6010ATC100-3N |
|---|---|---|
| Marke | Intel | Intel |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | Letzte Kaufgelegenheit | Letzte Kaufgelegenheit |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $17,50 | $9,95 |
| Family | FLEX 6000 / FLEX 6000A | FLEX 6000 |
| Logic Elements | 880 | — |
| Programmable I/O Pins | 71 | — |
| Gehäuse | 100-pin TQFP (14x14 mm, 0.5 mm pitch) | 100-pin TQFP (14 x 14 x 1.4 mm) |
| Speed Grade | -2 | -3 |
| Betriebstemperatur | Commercial (0C to +70C) | 0 °C to +70 °C (commercial) |
| Configuration Method | SRAM (volatile), in-system programmable | — |
| Programming Interface | IEEE 1149.1 (JTAG) / passive serial / EPC configuration device | — |
| Supply Voltage (VCCINT) | 5.0 V (FLEX 6000A); 3.3 V (FLEX 6000) | — |
| I/O Standards Supported | TTL, CMOS, PCI (with clamping diodes) | — |
| Number of LABs | [DATA_NEEDED: LAB count] | — |
| Embedded Memory | [DATA_NEEDED: embedded RAM blocks] | — |
| Global Clock Networks | [DATA_NEEDED: global clock count] | — |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 3 (168 hours) | 3 (168 hours) |
| Packaging | Tray (per Altera packing standard) | — |
| RoHS-Status | [DATA_NEEDED: RoHS compliance] | Compliant |
| Logic Elements / Cells | — | 880 |
| Equivalent Gate Count | — | 10,000 gates |
| Logic Array Blocks (LABs) | — | 88 |
| User I/Os | — | 71 |
| Supply Voltage (Operating) | — | 3.0 V to 3.6 V |
| Maximum Internal Frequency | — | 142.86 MHz |
| Process Technology | — | 0.42 µm CMOS |
| Programming Method | — | In-system SRAM via ByteBlaster/BitBlaster |