FDD8424H vs DMC2400UV-7 Vergleich
Detaillierter Direktvergleich von FDD8424H von onsemi und DMC2400UV-7 von Diodes Incorporated. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Diodes Incorporated
DMC2400UV-7 - 20V Complementary N/P MOSFET Array | Diodes Inc
DMC2400UV-7 ✓ AktivSpezifikationsvergleich
| Parameter | FDD8424H | DMC2400UV-7 |
|---|---|---|
| Marke | onsemi | Diodes Incorporated |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,39 | $0,14 |
| Manufacturer | onsemi (formerly Fairchild Semiconductor) | — |
| Product Type | Dual N-Channel and P-Channel MOSFET | — |
| Process Technology | PowerTrench (advanced trench-gate) | — |
| Configuration | N-Channel and P-Channel, independent dice | Complementary Pair (N + P) |
| Package Type | TO-252 (DPAK), surface mount | — |
| N-Channel VDS (Drain-Source Voltage) | 40 V | — |
| N-Channel Continuous Drain Current | 20 A | — |
| N-Channel RDS(on) max at VGS=10V | 24 mΩ | — |
| P-Channel VDS (Drain-Source Voltage) | -40 V | — |
| P-Channel Continuous Drain Current | -20 A | — |
| P-Channel RDS(on) max at VGS=-10V | 54 mΩ | — |
| Gate Charge N-Ch (Qg) typ at VGS=10V | 20 nC | — |
| Input Capacitance Ciss max | 1000 pF | — |
| Total Power Dissipation (Pd) | 1.3 W | — |
| Betriebs-Sperrschichttemperatur | -55 °C to +150 °C | -55C to +150C |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | Compliant |
| Halogenfrei | Compliant per GlobalSpec listing | — |
| ECCN | EAR99 | — |
| FET Type | — | N and P-Channel Complementary Pair |
| Drain-to-Source Voltage (Vdss) | — | 20 V |
| Continuous Drain Current (N-Ch) @ 25C | — | 1.03 A |
| Continuous Drain Current (P-Ch) @ 25C | — | 700 mA |
| RDS(on) Max @ VGS=4.5V, Id=200mA | — | 480 mOhm |
| Gate Threshold Voltage (Vgs(th)) | — | <1 V (low threshold) |
| Total Package Power Dissipation | — | 450 mW |
| Eingangskapazität | — | Low (per datasheet) |
| Switching Speed | — | Fast |
| Input/Output Leakage | — | Low |
| Gehäuse | — | SOT-563 |