FDD8424H vs DMC2400UV-7 비교
다음의 상세 나란히 비교: FDD8424H 제조: onsemi 및 DMC2400UV-7 제조: Diodes Incorporated. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | FDD8424H | DMC2400UV-7 |
|---|---|---|
| 브랜드 | onsemi | Diodes Incorporated |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.39 | $0.14 |
| Manufacturer | onsemi (formerly Fairchild Semiconductor) | — |
| Product Type | Dual N-Channel and P-Channel MOSFET | — |
| Process Technology | PowerTrench (advanced trench-gate) | — |
| Configuration | N-Channel and P-Channel, independent dice | Complementary Pair (N + P) |
| Package Type | TO-252 (DPAK), surface mount | — |
| N-Channel VDS (Drain-Source Voltage) | 40 V | — |
| N-Channel Continuous Drain Current | 20 A | — |
| N-Channel RDS(on) max at VGS=10V | 24 mΩ | — |
| P-Channel VDS (Drain-Source Voltage) | -40 V | — |
| P-Channel Continuous Drain Current | -20 A | — |
| P-Channel RDS(on) max at VGS=-10V | 54 mΩ | — |
| Gate Charge N-Ch (Qg) typ at VGS=10V | 20 nC | — |
| Input Capacitance Ciss max | 1000 pF | — |
| Total Power Dissipation (Pd) | 1.3 W | — |
| 동작 접합 온도 | -55 °C to +150 °C | -55C to +150C |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| 실장 유형 | Surface Mount | Surface Mount |
| RoHS 상태 | Compliant | Compliant |
| 할로겐 프리 | Compliant per GlobalSpec listing | — |
| ECCN | EAR99 | — |
| FET Type | — | N and P-Channel Complementary Pair |
| Drain-to-Source Voltage (Vdss) | — | 20 V |
| Continuous Drain Current (N-Ch) @ 25C | — | 1.03 A |
| Continuous Drain Current (P-Ch) @ 25C | — | 700 mA |
| RDS(on) Max @ VGS=4.5V, Id=200mA | — | 480 mOhm |
| Gate Threshold Voltage (Vgs(th)) | — | <1 V (low threshold) |
| Total Package Power Dissipation | — | 450 mW |
| 입력 커패시턴스 | — | Low (per datasheet) |
| Switching Speed | — | Fast |
| Input/Output Leakage | — | Low |
| 패키지 | — | SOT-563 |