FDD8424H vs DMC2400UV-7 Comparaison
Comparaison détaillée côte à côte de FDD8424H par onsemi et DMC2400UV-7 par Diodes Incorporated. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Diodes Incorporated
DMC2400UV-7 - 20V Complementary N/P MOSFET Array | Diodes Inc
DMC2400UV-7 ✓ ActifComparaison des spécifications
| Paramètre | FDD8424H | DMC2400UV-7 |
|---|---|---|
| Marque | onsemi | Diodes Incorporated |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,39 | $0,14 |
| Manufacturer | onsemi (formerly Fairchild Semiconductor) | — |
| Product Type | Dual N-Channel and P-Channel MOSFET | — |
| Process Technology | PowerTrench (advanced trench-gate) | — |
| Configuration | N-Channel and P-Channel, independent dice | Complementary Pair (N + P) |
| Package Type | TO-252 (DPAK), surface mount | — |
| N-Channel VDS (Drain-Source Voltage) | 40 V | — |
| N-Channel Continuous Drain Current | 20 A | — |
| N-Channel RDS(on) max at VGS=10V | 24 mΩ | — |
| P-Channel VDS (Drain-Source Voltage) | -40 V | — |
| P-Channel Continuous Drain Current | -20 A | — |
| P-Channel RDS(on) max at VGS=-10V | 54 mΩ | — |
| Gate Charge N-Ch (Qg) typ at VGS=10V | 20 nC | — |
| Input Capacitance Ciss max | 1000 pF | — |
| Total Power Dissipation (Pd) | 1.3 W | — |
| Température de jonction en fonctionnement | -55 °C to +150 °C | -55C to +150C |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Type de montage | Surface Mount | Surface Mount |
| Statut RoHS | Compliant | Compliant |
| Sans halogène | Compliant per GlobalSpec listing | — |
| ECCN | EAR99 | — |
| FET Type | — | N and P-Channel Complementary Pair |
| Drain-to-Source Voltage (Vdss) | — | 20 V |
| Continuous Drain Current (N-Ch) @ 25C | — | 1.03 A |
| Continuous Drain Current (P-Ch) @ 25C | — | 700 mA |
| RDS(on) Max @ VGS=4.5V, Id=200mA | — | 480 mOhm |
| Gate Threshold Voltage (Vgs(th)) | — | <1 V (low threshold) |
| Total Package Power Dissipation | — | 450 mW |
| Capacité d'entrée | — | Low (per datasheet) |
| Switching Speed | — | Fast |
| Input/Output Leakage | — | Low |
| Boîtier | — | SOT-563 |