FDG6332C-F085 vs FDG6332C Vergleich
Detaillierter Direktvergleich von FDG6332C-F085 von onsemi und FDG6332C von onsemi. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
onsemi
FDG6332C-F085 - 20V N&P Chan MOSFET Array | onsemi | SC-70-6
FDG6332C-F085 ⚠ Letzte BestellmöglichkeitSpezifikationsvergleich
| Parameter | FDG6332C-F085 | FDG6332C |
|---|---|---|
| Marke | onsemi | onsemi |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Letzte Kaufgelegenheit | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,17 | $0,14 |
| Manufacturer | onsemi | onsemi (formerly Fairchild Semiconductor) |
| Series | PowerTrench | — |
| FET Type | N- and P-Channel Complementary Array | — |
| Drain-to-Source Voltage (VDS) | 20 V | 20 V |
| Continuous Drain Current - N-FET (ID) | 700 mA | — |
| Continuous Drain Current - P-FET (ID) | 600 mA | — |
| Power Dissipation (PD) | 300 mW | — |
| Gehäuse | SC-88 / SC-70-6 (SOT-363) | SC-88 (SC-70-6), 6-pin |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +150C (junction) | -55 °C to +150 °C (TJ max) |
| Automotive Qualification | AEC-Q101 / -F085 grade | — |
| Technology | PowerTrench (trench-gate) | — |
| Configuration | Dual independent FETs (N+P) | Dual independent MOSFETs (N + P) |
| MSL-Level | [DATA_NEEDED: MSL rating] | 1 |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| VGS(th) - N-FET (typ) | [DATA_NEEDED: VGS threshold] | — |
| RDS(on) - N-FET at VGS=4.5V (typ/max) | [DATA_NEEDED: on-resistance] | — |
| Product Type | — | MOSFET Array (N-channel and P-channel, complementary) |
| Process Technology | — | PowerTrench |
| N-Channel Continuous Drain Current (ID) | — | 700 mA |
| P-Channel Continuous Drain Current (ID) | — | 600 mA |
| Total Package Power Dissipation (PD) | — | 300 mW |
| Thermal Resistance, Junction-to-Ambient (RθJA) | — | 415 °C/W (still air, JEDEC PCB) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| On-State Resistance N-Channel (RDS(on)) | — | [DATA_NEEDED: RDS(on) @ VGS] |
| On-State Resistance P-Channel (RDS(on)) | — | [DATA_NEEDED: RDS(on) @ VGS] |