FDG6332C-F085 vs FDG6332C 比較
詳細な並列比較: FDG6332C-F085 メーカー: onsemi および FDG6332C メーカー: onsemi。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | FDG6332C-F085 | FDG6332C |
|---|---|---|
| ブランド | onsemi | onsemi |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | ラストバイ | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.17 | $0.14 |
| Manufacturer | onsemi | onsemi (formerly Fairchild Semiconductor) |
| Series | PowerTrench | — |
| FET Type | N- and P-Channel Complementary Array | — |
| Drain-to-Source Voltage (VDS) | 20 V | 20 V |
| Continuous Drain Current - N-FET (ID) | 700 mA | — |
| Continuous Drain Current - P-FET (ID) | 600 mA | — |
| Power Dissipation (PD) | 300 mW | — |
| パッケージ | SC-88 / SC-70-6 (SOT-363) | SC-88 (SC-70-6), 6-pin |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作温度範囲 | -55C to +150C (junction) | -55 °C to +150 °C (TJ max) |
| Automotive Qualification | AEC-Q101 / -F085 grade | — |
| Technology | PowerTrench (trench-gate) | — |
| Configuration | Dual independent FETs (N+P) | Dual independent MOSFETs (N + P) |
| MSLレベル | [DATA_NEEDED: MSL rating] | 1 |
| RoHS ステータス | Compliant | Compliant |
| Lead-Free | Yes | — |
| VGS(th) - N-FET (typ) | [DATA_NEEDED: VGS threshold] | — |
| RDS(on) - N-FET at VGS=4.5V (typ/max) | [DATA_NEEDED: on-resistance] | — |
| Product Type | — | MOSFET Array (N-channel and P-channel, complementary) |
| Process Technology | — | PowerTrench |
| N-Channel Continuous Drain Current (ID) | — | 700 mA |
| P-Channel Continuous Drain Current (ID) | — | 600 mA |
| Total Package Power Dissipation (PD) | — | 300 mW |
| Thermal Resistance, Junction-to-Ambient (RθJA) | — | 415 °C/W (still air, JEDEC PCB) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| On-State Resistance N-Channel (RDS(on)) | — | [DATA_NEEDED: RDS(on) @ VGS] |
| On-State Resistance P-Channel (RDS(on)) | — | [DATA_NEEDED: RDS(on) @ VGS] |