FDG6332C-F085 vs FDG6332C 对比
详细并排对比 FDG6332C-F085 出自 onsemi 和 FDG6332C 出自 onsemi。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | FDG6332C-F085 | FDG6332C |
|---|---|---|
| 品牌 | onsemi | onsemi |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 最后采购期 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.17 | $0.14 |
| Manufacturer | onsemi | onsemi (formerly Fairchild Semiconductor) |
| Series | PowerTrench | — |
| FET Type | N- and P-Channel Complementary Array | — |
| Drain-to-Source Voltage (VDS) | 20 V | 20 V |
| Continuous Drain Current - N-FET (ID) | 700 mA | — |
| Continuous Drain Current - P-FET (ID) | 600 mA | — |
| Power Dissipation (PD) | 300 mW | — |
| 封装 | SC-88 / SC-70-6 (SOT-363) | SC-88 (SC-70-6), 6-pin |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55C to +150C (junction) | -55 °C to +150 °C (TJ max) |
| Automotive Qualification | AEC-Q101 / -F085 grade | — |
| Technology | PowerTrench (trench-gate) | — |
| Configuration | Dual independent FETs (N+P) | Dual independent MOSFETs (N + P) |
| MSL 等级 | [DATA_NEEDED: MSL rating] | 1 |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| VGS(th) - N-FET (typ) | [DATA_NEEDED: VGS threshold] | — |
| RDS(on) - N-FET at VGS=4.5V (typ/max) | [DATA_NEEDED: on-resistance] | — |
| Product Type | — | MOSFET Array (N-channel and P-channel, complementary) |
| Process Technology | — | PowerTrench |
| N-Channel Continuous Drain Current (ID) | — | 700 mA |
| P-Channel Continuous Drain Current (ID) | — | 600 mA |
| Total Package Power Dissipation (PD) | — | 300 mW |
| Thermal Resistance, Junction-to-Ambient (RθJA) | — | 415 °C/W (still air, JEDEC PCB) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| On-State Resistance N-Channel (RDS(on)) | — | [DATA_NEEDED: RDS(on) @ VGS] |
| On-State Resistance P-Channel (RDS(on)) | — | [DATA_NEEDED: RDS(on) @ VGS] |