G9S12GN32F1VLCR vs MC9S08LH36CLK Vergleich

Detaillierter Direktvergleich von G9S12GN32F1VLCR von NXP Semiconductors und MC9S08LH36CLK von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
G9S12GN32F1VLCR G9S12GN32F1VLCR - 16-bit S12G MCU, 32KB Flash, CAN/LIN | NXP

G9S12GN32F1VLCR - 16-bit S12G MCU, 32KB Flash, CAN/LIN | NXP

G9S12GN32F1VLCR ✓ Aktiv
NXP Semiconductors
MC9S08LH36CLK MC9S08LH36CLK - 8-bit S08 MCU 40MHz 36KB Flash | NXP

MC9S08LH36CLK - 8-bit S08 MCU 40MHz 36KB Flash | NXP

MC9S08LH36CLK ✓ Aktiv

Spezifikationsvergleich

Parameter G9S12GN32F1VLCR MC9S08LH36CLK
Marke NXP Semiconductors NXP Semiconductors
Kategorie Microcontrollers Microcontrollers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $3,61 $0,00
Core S12 (HCS12, 16-bit CISC) —
Program Flash 32 KB —
SRAM 2 KB —
Bus Frequency (max) 25 MHz —
CAN Controller 1 x CAN 2.0A/B —
LIN / SAE J2602 Yes (via SCI + external transceiver) —
ADC 10-bit, 8 channels [DATA_NEEDED: channel count confirmation] —
PWM Channels Multi-channel 16-bit [DATA_NEEDED: exact channel count] —
Enhanced Capture Timer (ECT) Yes —
Gehäuse LQFP-32 80-LQFP (14 x 14 mm)
Montageart Surface Mount Surface Mount
Betriebstemperatur -40 C to +105 C (VLC suffix, automotive grade) [DATA_NEEDED: confirmation of grade letter] —
Feuchtigkeitsempfindlichkeitsgrad (MSL) 3 —
Peak Reflow Temperature 260 °C —
Maximum Time at Peak Reflow 40 s —
Terminal Finish Tin (Sn), matte —
JEDEC J-STD-609 Code e3 —
Lead-Free Yes (e3 Sn finish) —
RoHS-Status Compliant RoHS Compliant
Security Flash security lockout supported [DATA_NEEDED: full feature list] —
Debug Interface BDM (Background Debug Mode) —
Core Processor — S08
Core Size — 8-Bit
CPU Frequency — 40 MHz
Bus Frequency (per distributor listing) — 16 MHz
Flash Memory — 36 KB (36K x 8)
Supply Voltage Range — 2.1 V to 3.6 V
Number of I/O — 37
Program Memory Type — FLASH
Operating Voltage at Reduced Speed — 2.1 V (up to 20 MHz, per family datasheet)
Lifecycle Stage — ACTIVE (per parametric source)
Temperature Range — [DATA_NEEDED: operating temperature range]
RAM Size — [DATA_NEEDED: RAM size]
Peripherals — [DATA_NEEDED: peripheral set detail]
Package Body Dimensions — 14 mm x 14 mm

Datenblätter & Ressourcen

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