G9S12GN32F1VLCR vs MC9S08LH36CLK Comparação

Comparação detalhada lado a lado de G9S12GN32F1VLCR por NXP Semiconductors e MC9S08LH36CLK por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

NXP Semiconductors
G9S12GN32F1VLCR G9S12GN32F1VLCR - 16-bit S12G MCU, 32KB Flash, CAN/LIN | NXP

G9S12GN32F1VLCR - 16-bit S12G MCU, 32KB Flash, CAN/LIN | NXP

G9S12GN32F1VLCR ✓ Ativo
NXP Semiconductors
MC9S08LH36CLK MC9S08LH36CLK - 8-bit S08 MCU 40MHz 36KB Flash | NXP

MC9S08LH36CLK - 8-bit S08 MCU 40MHz 36KB Flash | NXP

MC9S08LH36CLK ✓ Ativo

Comparação de especificações

Parâmetro G9S12GN32F1VLCR MC9S08LH36CLK
Marca NXP Semiconductors NXP Semiconductors
Categoria Microcontrollers Microcontrollers
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $3,61 $0,00
Core S12 (HCS12, 16-bit CISC) —
Program Flash 32 KB —
SRAM 2 KB —
Bus Frequency (max) 25 MHz —
CAN Controller 1 x CAN 2.0A/B —
LIN / SAE J2602 Yes (via SCI + external transceiver) —
ADC 10-bit, 8 channels [DATA_NEEDED: channel count confirmation] —
PWM Channels Multi-channel 16-bit [DATA_NEEDED: exact channel count] —
Enhanced Capture Timer (ECT) Yes —
Encapsulamento LQFP-32 80-LQFP (14 x 14 mm)
Tipo de montagem Surface Mount Surface Mount
Temperatura de operação -40 C to +105 C (VLC suffix, automotive grade) [DATA_NEEDED: confirmation of grade letter] —
Nível de sensibilidade à umidade (MSL) 3 —
Peak Reflow Temperature 260 °C —
Maximum Time at Peak Reflow 40 s —
Terminal Finish Tin (Sn), matte —
JEDEC J-STD-609 Code e3 —
Lead-Free Yes (e3 Sn finish) —
Status RoHS Compliant RoHS Compliant
Security Flash security lockout supported [DATA_NEEDED: full feature list] —
Debug Interface BDM (Background Debug Mode) —
Core Processor — S08
Core Size — 8-Bit
CPU Frequency — 40 MHz
Bus Frequency (per distributor listing) — 16 MHz
Flash Memory — 36 KB (36K x 8)
Supply Voltage Range — 2.1 V to 3.6 V
Number of I/O — 37
Program Memory Type — FLASH
Operating Voltage at Reduced Speed — 2.1 V (up to 20 MHz, per family datasheet)
Lifecycle Stage — ACTIVE (per parametric source)
Temperature Range — [DATA_NEEDED: operating temperature range]
RAM Size — [DATA_NEEDED: RAM size]
Peripherals — [DATA_NEEDED: peripheral set detail]
Package Body Dimensions — 14 mm x 14 mm

Fichas técnicas e recursos

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