H5AN4G6NBJR-PBC vs H5AN4G6NBJR-UHC Vergleich
Detaillierter Direktvergleich von H5AN4G6NBJR-PBC von SK hynix und H5AN4G6NBJR-UHC von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5AN4G6NBJR-PBC | H5AN4G6NBJR-UHC |
|---|---|---|
| Marke | SK hynix | SK hynix |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $6,60 | $8,09 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Memory Density | 4 Gbit | — |
| Speicherorganisation | 256M x 16 (268435456 words x 16 bits) | 256M x 16 |
| Supply Voltage (VDD) | 1.2 V | 1.14 V to 1.26 V |
| Schnittstelle | DDR4 (double data rate, synchronous) | — |
| Package Code | TFBGA | — |
| Gehäuse | FBGA-96 (PBGA96), rectangular | FBGA-96 (PBGA-96) |
| Number of Terminals | 96 | — |
| Montageart | Surface Mount | Surface Mount |
| Eigenschaften | Auto self-refresh, data mask, asynchronous reset, dynamic ODT, ZQ calibration, write leveling, CRC | — |
| Betriebstemperatur | [DATA_NEEDED: temperature range for -C grade] | -40C to +95C |
| Data Rate / Speed Grade | [DATA_NEEDED: speed grade PBC data rate] | — |
| CAS-Latenz | [DATA_NEEDED: CAS latency for PBC speed grade] | — |
| Process | CMOS | — |
| Lead-Free / Halogen-Free | Yes (per family datasheet, Lead-Free & Halogen-Free) | — |
| Temperature Grade | OTHER (per distributor listing) | — |
| Speichergröße | — | 4 Gbit |
| Clock Frequency | — | 1.6 GHz |
| Technology | — | CMOS |
| Self Refresh | — | Auto self-refresh |
| Data Mask Function | — | Yes (DM) |
| Asynchronous Reset | — | Yes (RESET_n) |
| On-Die Termination | — | Dynamic ODT |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes (command/address CRC) |
| RoHS-Status | — | Compliant |