H5AN4G6NBJR-VKC vs K4A4G165WD-BCTD Vergleich
Detaillierter Direktvergleich von H5AN4G6NBJR-VKC von SK hynix und K4A4G165WD-BCTD von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5AN4G6NBJR-VKC | K4A4G165WD-BCTD |
|---|---|---|
| Marke | SK hynix | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $12,96 | $19,00 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Speichergröße | 4 Gbit | — |
| Memory Organization | 256M x 16 | — |
| Datenrate | 2666 Mbps | 2666 Mbps/pin (-BCTD speed grade) |
| Clock Frequency | 1.6 GHz (internal reference per distributor data) | — |
| Supply Voltage (VDD) | 1.2 V nominal (1.14 V to 1.26 V) | 1.2 V |
| Operating Current | 38 mA (typical, per distributor data) | — |
| Schnittstelle | Parallel | SSTL-12 |
| Technology | CMOS | — |
| Betriebstemperatur | -40C to +95C | 0C to +85C (commercial) |
| Gehäuse | FBGA-96 / TFBGA (PBGA96) | 96-ball FBGA |
| Body Size | 13 mm, 1.2 mm profile, 0.8 mm ball pitch | — |
| Montageart | Surface Mount | Surface Mount (BGA) |
| Termination | Dynamic on-chip termination (ODT) | — |
| Calibration | ZQ calibration; write leveling | — |
| Protection Functions | Asynchronous reset; CRC; data mask | — |
| Refresh | Auto self-refresh | — |
| RoHS-Status | Compliant | [DATA_NEEDED: RoHS status] |
| Packaging | Tray | — |
| Density | — | 4 Gbit |
| Speicherorganisation | — | 256M x 16 |
| Core Supply (VPP) | — | 2.5 V |
| Data Mask | — | Yes (DM per byte lane) |
| Bank Architecture | — | 16 banks / 4 bank groups |
| On-Die Termination | — | Dynamic ODT |
| ZQ Calibration | — | Yes (external RZQ resistor) |
| CRC / CA Parity | — | CRC read/write support |
| Reset | — | Asynchronous reset (RESET_n) |