H5AN4G6NBJR-VKC vs K4A4G165WD-BCTD Comparison

Detailed side-by-side comparison of H5AN4G6NBJR-VKC by SK hynix and K4A4G165WD-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H5AN4G6NBJR-VKC H5AN4G6NBJR-VKC - 4Gb DDR4 SDRAM 2666Mbps x16 | SK Hynix

H5AN4G6NBJR-VKC - 4Gb DDR4 SDRAM 2666Mbps x16 | SK Hynix

H5AN4G6NBJR-VKC ✓ Active
Samsung Electronics
K4A4G165WD-BCTD K4A4G165WD-BCTD - 4Gb DDR4 SDRAM x16 2666Mbps | Samsung

K4A4G165WD-BCTD - 4Gb DDR4 SDRAM x16 2666Mbps | Samsung

K4A4G165WD-BCTD ✓ Active

Specification Comparison

Parameter H5AN4G6NBJR-VKC K4A4G165WD-BCTD
Brand SK hynix Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $12.96 $19.00
Memory Type DDR4 SDRAM DDR4 SDRAM
Memory Size 4 Gbit —
Memory Organization 256M x 16 —
Data Rate 2666 Mbps 2666 Mbps/pin (-BCTD speed grade)
Clock Frequency 1.6 GHz (internal reference per distributor data) —
Supply Voltage (VDD) 1.2 V nominal (1.14 V to 1.26 V) 1.2 V
Operating Current 38 mA (typical, per distributor data) —
Interface Parallel SSTL-12
Technology CMOS —
Operating Temperature -40C to +95C 0C to +85C (commercial)
Package FBGA-96 / TFBGA (PBGA96) 96-ball FBGA
Body Size 13 mm, 1.2 mm profile, 0.8 mm ball pitch —
Mounting Type Surface Mount Surface Mount (BGA)
Termination Dynamic on-chip termination (ODT) —
Calibration ZQ calibration; write leveling —
Protection Functions Asynchronous reset; CRC; data mask —
Refresh Auto self-refresh —
RoHS Status Compliant [DATA_NEEDED: RoHS status]
Packaging Tray —
Density — 4 Gbit
Organization — 256M x 16
Core Supply (VPP) — 2.5 V
Data Mask — Yes (DM per byte lane)
Bank Architecture — 16 banks / 4 bank groups
On-Die Termination — Dynamic ODT
ZQ Calibration — Yes (external RZQ resistor)
CRC / CA Parity — CRC read/write support
Reset — Asynchronous reset (RESET_n)

Datasheets & Resources

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