H5AN4G8NBJR-PBC vs H5AN4G8NBJR-VKIR Vergleich
Detaillierter Direktvergleich von H5AN4G8NBJR-PBC von SK hynix und H5AN4G8NBJR-VKIR von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5AN4G8NBJR-PBC | H5AN4G8NBJR-VKIR |
|---|---|---|
| Marke | SK hynix | SK hynix |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,20 | $1,98 |
| Memory Density | 4 Gbit | — |
| Speicherorganisation | 512M x 8 | 512M x 8 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Schnittstellentyp | Parallel, JEDEC DDR4 | — |
| Supply Voltage VDD | 1.2 V | — |
| Supply Voltage VDDQ | 1.2 V | — |
| Speed Grade | PBC | — |
| Clock Frequency | [DATA_NEEDED: Clock Frequency] | — |
| CAS Latency (CL) | [DATA_NEEDED: CAS Latency] | — |
| Gehäuse | 78-ball FBGA | 78-ball FBGA |
| Montageart | Surface Mount | Surface Mount |
| Normal Operating Case Temperature | 0C to 85C | — |
| Extended Temperature Range | up to 95C case (with increased refresh) | +85C to +95C (case, per datasheet conditions) |
| Lead Free | Yes | — |
| Halogenfrei | Yes | — |
| Refresh | 8n prefetch, standard/auto refresh per DDR4 JEDEC | [DATA_NEEDED: refresh interval specification] |
| Density | — | 4 Gb |
| Datenrate | — | 2666 Mbps per pin |
| Supply Voltage (VDD) | — | 1.2 V |
| Operating Temperature (Industrial) | — | -40C to +85C (case) |
| Technology | — | CMOS DRAM |
| Product Family | — | H5AN4G4/6/8NBJR series |
| Speed Grade Code | — | -VKI |
| Packing Suffix | — | R (Tape & Reel) |
| VPP Supply | — | [DATA_NEEDED: VPP supply voltage] |
| CAS-Latenz | — | [DATA_NEEDED: CAS latency] |
| Package Dimensions | — | [DATA_NEEDED: package dimensions] |