H5AN4G8NBJR-RDC vs H5AN4G6NBJR-RDC Vergleich
Detaillierter Direktvergleich von H5AN4G8NBJR-RDC von SK hynix und H5AN4G6NBJR-RDC von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5AN4G8NBJR-RDC | H5AN4G6NBJR-RDC |
|---|---|---|
| Marke | SK hynix | SK hynix |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,95 | $6,15 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gb |
| Speicherorganisation | 512M x 8 | 256M x 16 |
| Schnittstelle | DDR4 (Double Data Rate IV) | CMOS, fully synchronous |
| Gehäuse | 78-ball FBGA | — |
| Montageart | Surface Mount | Surface Mount |
| Versorgungsspannung | [DATA_NEEDED: VDD supply voltage] | 1.2 V |
| Datenrate | [DATA_NEEDED: speed grade Mbps] | — |
| Bank Architecture | 8 banks with 4 bank groups (x8) | — |
| Refresh | Auto-refresh and self-refresh | — |
| Temperature Grade | [DATA_NEEDED: operating temperature range] | OTHER (per Partstack listing); -I industrial option -40C to +95C per family datasheet |
| Termination | On-Die Termination (ODT) | — |
| RoHS-Status | Lead-Free & Halogen-Free (RoHS Compliant) | — |
| Process Technology | CMOS | — |
| Manufacturer | SK hynix | — |
| Family Series | H5AN4G4/8/6NBJR | — |
| Package Code | — | TFBGA (FBGA-96) |
| Package Shape | — | Rectangular |
| Package Width | — | 7.5 mm |
| Number of Terminals | — | 96 |
| Self Refresh | — | Auto / Self Refresh |
| Data Mask Function | — | Yes |
| Asynchronous Reset | — | Yes |
| On-Die Termination | — | Dynamic ODT |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |
| Lead-Free / Halogen-Free | — | Yes (per datasheet cover: Lead-Free & Halogen-Free) |
| Speed Grade | — | -RDC (see manufacturer datasheet for validated data-rate bin) |