H5AN4G8NBJR-UHI vs H5AN4G8NBJR-VKIR Vergleich
Detaillierter Direktvergleich von H5AN4G8NBJR-UHI von SK hynix und H5AN4G8NBJR-VKIR von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5AN4G8NBJR-UHI | H5AN4G8NBJR-VKIR |
|---|---|---|
| Marke | SK hynix | SK hynix |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,25 | $1,98 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gb |
| Speicherorganisation | 512M x 8 | 512M x 8 |
| Speed Grade | DDR4-2400 (PC4-19200) | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Gehäuse | FBGA-78 (78-ball fine-pitch BGA) | 78-ball FBGA |
| Montageart | Surface Mount | Surface Mount |
| Grade | Industrial (-UHI suffix) | — |
| Datenrate | 2400 MT/s | 2666 Mbps per pin |
| Schnittstelle | JEDEC DDR4 SDRAM | — |
| Bank Architecture | DDR4 bank group architecture | — |
| Refresh | Self-refresh and auto-refresh support | [DATA_NEEDED: refresh interval specification] |
| Termination | On-die termination (ODT) | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | — |
| CAS-Latenz | [DATA_NEEDED: CAS latency at DDR4-2400] | [DATA_NEEDED: CAS latency] |
| RoHS-Status | [DATA_NEEDED: RoHS status] | — |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | — |
| Operating Temperature (Industrial) | — | -40C to +85C (case) |
| Extended Temperature Range | — | +85C to +95C (case, per datasheet conditions) |
| Technology | — | CMOS DRAM |
| Product Family | — | H5AN4G4/6/8NBJR series |
| Speed Grade Code | — | -VKI |
| Packing Suffix | — | R (Tape & Reel) |
| VPP Supply | — | [DATA_NEEDED: VPP supply voltage] |
| Package Dimensions | — | [DATA_NEEDED: package dimensions] |