H5AN4G8NBJR-UHI vs H5AN4G8NBJR-VKIR 对比

详细并排对比 H5AN4G8NBJR-UHI 出自 SK hynix 和 H5AN4G8NBJR-VKIR 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN4G8NBJR-UHI H5AN4G8NBJR-UHI - 4Gb DDR4-2400 SDRAM | SK hynix

H5AN4G8NBJR-UHI - 4Gb DDR4-2400 SDRAM | SK hynix

H5AN4G8NBJR-UHI ✓ 量产中
SK hynix
H5AN4G8NBJR-VKIR H5AN4G8NBJR-VKIR - 4Gb DDR4 2666Mbps DRAM | SK hynix

H5AN4G8NBJR-VKIR - 4Gb DDR4 2666Mbps DRAM | SK hynix

H5AN4G8NBJR-VKIR ✓ 量产中

规格对比

参数 H5AN4G8NBJR-UHI H5AN4G8NBJR-VKIR
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.25 $1.98
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 4 Gbit 4 Gb
存储组织 512M x 8 512M x 8
Speed Grade DDR4-2400 (PC4-19200) —
Supply Voltage (VDD) 1.2 V 1.2 V
封装 FBGA-78 (78-ball fine-pitch BGA) 78-ball FBGA
安装类型 Surface Mount Surface Mount
Grade Industrial (-UHI suffix) —
数据速率 2400 MT/s 2666 Mbps per pin
接口 JEDEC DDR4 SDRAM —
Bank Architecture DDR4 bank group architecture —
Refresh Self-refresh and auto-refresh support [DATA_NEEDED: refresh interval specification]
Termination On-die termination (ODT) —
工作温度 [DATA_NEEDED: operating temperature range] —
CAS 延迟 [DATA_NEEDED: CAS latency at DDR4-2400] [DATA_NEEDED: CAS latency]
RoHS 状态 [DATA_NEEDED: RoHS status] —
MSL 等级 [DATA_NEEDED: moisture sensitivity level] —
Operating Temperature (Industrial) — -40C to +85C (case)
Extended Temperature Range — +85C to +95C (case, per datasheet conditions)
Technology — CMOS DRAM
Product Family — H5AN4G4/6/8NBJR series
Speed Grade Code — -VKI
Packing Suffix — R (Tape & Reel)
VPP Supply — [DATA_NEEDED: VPP supply voltage]
Package Dimensions — [DATA_NEEDED: package dimensions]

数据手册与资源

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