H5AN4G8NBJR-UHI vs MT40A512M8RH-083E Vergleich
Detaillierter Direktvergleich von H5AN4G8NBJR-UHI von SK hynix und MT40A512M8RH-083E von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5AN4G8NBJR-UHI | MT40A512M8RH-083E |
|---|---|---|
| Marke | SK hynix | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,25 | $3,30 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gbit |
| Speicherorganisation | 512M x 8 | 512M x 8 |
| Speed Grade | DDR4-2400 (PC4-19200) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Gehäuse | FBGA-78 (78-ball fine-pitch BGA) | 78-ball FBGA (9 x 10.5 mm) |
| Montageart | Surface Mount | — |
| Grade | Industrial (-UHI suffix) | — |
| Datenrate | 2400 MT/s | — |
| Schnittstelle | JEDEC DDR4 SDRAM | — |
| Bank Architecture | DDR4 bank group architecture | — |
| Refresh | Self-refresh and auto-refresh support | 64 ms, 8192-cycle refresh (to 95C) |
| Termination | On-die termination (ODT) | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | 0C to +95C |
| CAS-Latenz | [DATA_NEEDED: CAS latency at DDR4-2400] | [DATA_NEEDED: CAS latency per speed bin table] |
| RoHS-Status | [DATA_NEEDED: RoHS status] | Compliant |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | — |
| Industry Speed Grade | — | DDR4-2400 |
| Clock Rate | — | 1.2 GHz |
| Internal Banks | — | 8 banks (2 groups of 4) |
| Prefetch | — | 8n-bit |
| VDD / VDDQ | — | 1.2 V +/-60 mV |
| VPP | — | 2.5 V, -125 mV/+250 mV |
| I/O Structure | — | 1.2 V pseudo open-drain |
| VREFDQ | — | On-die internal, adjustable generation |
| FBGA Code | — | D9TGG |
| Marking Code | — | D9TGG |
| Data Strobe Preamble | — | Programmable |