H5AN4G8NBJR-VKIR vs H5AN4G8NBJR-UHI Vergleich
Detaillierter Direktvergleich von H5AN4G8NBJR-VKIR von SK hynix und H5AN4G8NBJR-UHI von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5AN4G8NBJR-VKIR | H5AN4G8NBJR-UHI |
|---|---|---|
| Marke | SK hynix | SK hynix |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,98 | $2,25 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gb | 4 Gbit |
| Speicherorganisation | 512M x 8 | 512M x 8 |
| Datenrate | 2666 Mbps per pin | 2400 MT/s |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Gehäuse | 78-ball FBGA | FBGA-78 (78-ball fine-pitch BGA) |
| Montageart | Surface Mount | Surface Mount |
| Operating Temperature (Industrial) | -40C to +85C (case) | — |
| Extended Temperature Range | +85C to +95C (case, per datasheet conditions) | — |
| Technology | CMOS DRAM | — |
| Product Family | H5AN4G4/6/8NBJR series | — |
| Speed Grade Code | -VKI | — |
| Packing Suffix | R (Tape & Reel) | — |
| VPP Supply | [DATA_NEEDED: VPP supply voltage] | — |
| CAS-Latenz | [DATA_NEEDED: CAS latency] | [DATA_NEEDED: CAS latency at DDR4-2400] |
| Package Dimensions | [DATA_NEEDED: package dimensions] | — |
| Refresh | [DATA_NEEDED: refresh interval specification] | Self-refresh and auto-refresh support |
| Speed Grade | — | DDR4-2400 (PC4-19200) |
| Grade | — | Industrial (-UHI suffix) |
| Schnittstelle | — | JEDEC DDR4 SDRAM |
| Bank Architecture | — | DDR4 bank group architecture |
| Termination | — | On-die termination (ODT) |
| Betriebstemperatur | — | [DATA_NEEDED: operating temperature range] |
| RoHS-Status | — | [DATA_NEEDED: RoHS status] |
| MSL-Level | — | [DATA_NEEDED: moisture sensitivity level] |