H5AN4G8NBJR-VKIR vs H5AN4G8NBJR-UHI 对比
详细并排对比 H5AN4G8NBJR-VKIR 出自 SK hynix 和 H5AN4G8NBJR-UHI 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5AN4G8NBJR-VKIR | H5AN4G8NBJR-UHI |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.98 | $2.25 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gb | 4 Gbit |
| 存储组织 | 512M x 8 | 512M x 8 |
| 数据速率 | 2666 Mbps per pin | 2400 MT/s |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| 封装 | 78-ball FBGA | FBGA-78 (78-ball fine-pitch BGA) |
| 安装类型 | Surface Mount | Surface Mount |
| Operating Temperature (Industrial) | -40C to +85C (case) | — |
| Extended Temperature Range | +85C to +95C (case, per datasheet conditions) | — |
| Technology | CMOS DRAM | — |
| Product Family | H5AN4G4/6/8NBJR series | — |
| Speed Grade Code | -VKI | — |
| Packing Suffix | R (Tape & Reel) | — |
| VPP Supply | [DATA_NEEDED: VPP supply voltage] | — |
| CAS 延迟 | [DATA_NEEDED: CAS latency] | [DATA_NEEDED: CAS latency at DDR4-2400] |
| Package Dimensions | [DATA_NEEDED: package dimensions] | — |
| Refresh | [DATA_NEEDED: refresh interval specification] | Self-refresh and auto-refresh support |
| Speed Grade | — | DDR4-2400 (PC4-19200) |
| Grade | — | Industrial (-UHI suffix) |
| 接口 | — | JEDEC DDR4 SDRAM |
| Bank Architecture | — | DDR4 bank group architecture |
| Termination | — | On-die termination (ODT) |
| 工作温度 | — | [DATA_NEEDED: operating temperature range] |
| RoHS 状态 | — | [DATA_NEEDED: RoHS status] |
| MSL 等级 | — | [DATA_NEEDED: moisture sensitivity level] |