H5AN8G6NCJR-VKC vs H5AN8G6NAFR-PBC Vergleich
Detaillierter Direktvergleich von H5AN8G6NCJR-VKC von SK hynix und H5AN8G6NAFR-PBC von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5AN8G6NCJR-VKC | H5AN8G6NAFR-PBC |
|---|---|---|
| Marke | SK hynix | SK hynix |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $60,00 | $3,55 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gbit |
| Speicherorganisation | 512M x 16 | 512M x 16 |
| Datenrate | 2666 Mbps | — |
| Supply Voltage (VDD) | 1.2 V (1.14V to 1.26V) | — |
| Betriebstemperatur | 0°C to +95°C | [DATA_NEEDED: operating temperature range] |
| Gehäuse | FBGA-96 | TFBGA-96 (rectangular) |
| Operating Current (IDD2N) | 28 mA | — |
| Operating Current (IDD4R) | 45 mA | — |
| Burst Length | 8 (BC4) | — |
| CAS-Latenz | [DATA_NEEDED: CAS Latency] | — |
| Row Address Bits | [DATA_NEEDED: Row Address Bits] | — |
| Column Address Bits | [DATA_NEEDED: Column Address Bits] | — |
| Lead-Free | Yes | — |
| Halogenfrei | Yes | — |
| RoHS | Compliant | — |
| VDD Supply Voltage | — | 1.20 V +/- 0.06 V |
| VDDQ Supply Voltage | — | 1.20 V +/- 0.06 V |
| VPP Supply Voltage | — | 2.5 V +0.25/-0.125 V |
| Schnittstellentyp | — | DDR4 (parallel, double data rate) |
| Speed Bins Supported | — | DDR4-1600 / 1866 / 2133 / 2400 (datasheet speed bin tables) |
| Refresh | — | Auto / Self Refresh |
| DLL | — | DLL ON mode for speed bin operation |
| Clock | — | Differential clock (CK/CK#) |
| Number of Terminals | — | 96 |
| Montageart | — | Surface Mount |
| RoHS-Status | — | Compliant (Lead-Free & Halogen-Free) |
| Composition | — | CMOS |