H5AN8G6NCJR-VKC vs H5AN8G6NAFR-PBC 对比
详细并排对比 H5AN8G6NCJR-VKC 出自 SK hynix 和 H5AN8G6NAFR-PBC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5AN8G6NCJR-VKC | H5AN8G6NAFR-PBC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $60.00 | $3.55 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gbit |
| 存储组织 | 512M x 16 | 512M x 16 |
| 数据速率 | 2666 Mbps | — |
| Supply Voltage (VDD) | 1.2 V (1.14V to 1.26V) | — |
| 工作温度 | 0°C to +95°C | [DATA_NEEDED: operating temperature range] |
| 封装 | FBGA-96 | TFBGA-96 (rectangular) |
| Operating Current (IDD2N) | 28 mA | — |
| Operating Current (IDD4R) | 45 mA | — |
| Burst Length | 8 (BC4) | — |
| CAS 延迟 | [DATA_NEEDED: CAS Latency] | — |
| Row Address Bits | [DATA_NEEDED: Row Address Bits] | — |
| Column Address Bits | [DATA_NEEDED: Column Address Bits] | — |
| Lead-Free | Yes | — |
| 无卤 | Yes | — |
| RoHS | Compliant | — |
| VDD Supply Voltage | — | 1.20 V +/- 0.06 V |
| VDDQ Supply Voltage | — | 1.20 V +/- 0.06 V |
| VPP Supply Voltage | — | 2.5 V +0.25/-0.125 V |
| 接口类型 | — | DDR4 (parallel, double data rate) |
| Speed Bins Supported | — | DDR4-1600 / 1866 / 2133 / 2400 (datasheet speed bin tables) |
| Refresh | — | Auto / Self Refresh |
| DLL | — | DLL ON mode for speed bin operation |
| Clock | — | Differential clock (CK/CK#) |
| Number of Terminals | — | 96 |
| 安装类型 | — | Surface Mount |
| RoHS 状态 | — | Compliant (Lead-Free & Halogen-Free) |
| Composition | — | CMOS |