H5AN8G8NCJR-UHC vs H5AN8G8NCJR-PBC Vergleich

Detaillierter Direktvergleich von H5AN8G8NCJR-UHC von SK hynix und H5AN8G8NCJR-PBC von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

SK hynix
H5AN8G8NCJR-PBC H5AN8G8NCJR-PBC - 8Gb DDR4 SDRAM, 1.2V | SK Hynix

H5AN8G8NCJR-PBC - 8Gb DDR4 SDRAM, 1.2V | SK Hynix

H5AN8G8NCJR-PBC ✓ Aktiv

Spezifikationsvergleich

Parameter H5AN8G8NCJR-UHC H5AN8G8NCJR-PBC
Marke SK hynix SK hynix
Kategorie Memory ICs Memory ICs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $2,88 $2,40
Speichertyp DDR4 SDRAM DDR4 SDRAM
Density 8 Gb —
Speicherorganisation 1G x 8 1G x 8 (x8)
Speed Grade DDR4-2400 (PC4-19200) —
Supply Voltage (VDD) 1.2 V 1.2 V
Gehäuse FBGA-78 78-ball FBGA
Montageart Surface Mount (BGA) Surface Mount
Betriebstemperatur [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
RoHS Code Yes —
REACH Compliance Yes (per distributor record) —
Lead-Free Yes (family documented as Lead-Free & Halogen-Free) —
Halogenfrei Yes —
Part Life Cycle Code Active —
Access Type Synchronous, both clock edges (DDR) —
Memory Configuration Bank-group architecture DDR4 —
Die Revision CJR (C-die family) —
Manufacturer SK hynix Inc. —
Speichergröße — 8 Gb (1 GB)
Interface Voltage (VDDQ) — 1.2 V (SSTL12)
Datenrate — [DATA_NEEDED: data rate for -PBC speed grade (Mbps/MT/s)]
Architecture — CMOS, fully synchronous, dual-edge clocked
Bank Structure — 8 internal banks, bank-group architecture
Burst Length — BL8
Eigenschaften — ODT, DM, DQS strobes, programmable CAS latency, self-refresh
Die Revision Family — CJR (H5AN8G8NCJR-xxC)
RoHS-Status — Lead-Free & Halogen-Free
Refresh — Auto-refresh and self-refresh
Typical Applications — PC/server main memory, embedded solder-down memory

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