H5ANAG6NAMR-UHC vs H5ANAG6NCR-VKC Vergleich
Detaillierter Direktvergleich von H5ANAG6NAMR-UHC von SK hynix und H5ANAG6NCR-VKC von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5ANAG6NAMR-UHC | H5ANAG6NCR-VKC |
|---|---|---|
| Marke | SK hynix | SK hynix |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $4,50 | $0,00 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Memory Density | 16 Gbit (2 GB) | 16 Gbit |
| Speicherorganisation | 1G x 16 | 2G x 8 |
| Speed Grade / Data Rate | DDR4-2400 (UHC bin, PC4-19200) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Architecture | CMOS DDR4 with bank groups | — |
| Power Class | Normal Power | — |
| Gehäuse | FBGA-96 (PBGA96) | 96-ball FBGA |
| Montageart | Surface Mount (BGA solder ball) | Surface Mount |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: temperature suffix range confirmation] |
| Refresh | Self-refresh and auto-refresh (DDR4 standard 64 ms) | — |
| CAS-Latenz | [DATA_NEEDED: CL for UHC bin] | — |
| Schnittstellentyp | Parallel, synchronous, double data rate | — |
| Available Speed Bins (family) | PB / RD / TF / UH / VK | — |
| Application Class | Main memory, embedded, industrial | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance statement] |
| Lebenszyklusstatus | Active production | — |
| Schnittstelle | — | DDR4 (Double Data Rate 4) |
| Supply Voltage VDD | — | 1.2 V |
| Supply Voltage VDDQ | — | 1.2 V |
| Datenrate | — | [DATA_NEEDED: verified speed grade in Mbps] |
| Banks | — | 16 banks (4 bank groups x 4) |
| Burst Length | — | BL8 |
| Refresh Mode | — | 1x / 2x / 4X per JEDEC DDR4 |
| Technology | — | CMOS |
| Application | — | Main memory (PC / server / embedded) |