H5ANAG6NBJR-UHC vs H5AN4G6NBJR-UHC Vergleich
Detaillierter Direktvergleich von H5ANAG6NBJR-UHC von SK hynix und H5AN4G6NBJR-UHC von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5ANAG6NBJR-UHC | H5AN4G6NBJR-UHC |
|---|---|---|
| Marke | SK hynix | SK hynix |
| Kategorie | DRAM | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $8,09 | $8,09 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gb | — |
| Speicherorganisation | 256M x 16 | 256M x 16 |
| Schnittstelle | DDR4 (CMOS) | — |
| Gehäuse | PBGA96 / FBGA-96 (TFBGA) | FBGA-96 (PBGA-96) |
| Package Dimensions | 13 mm length (per JESD-30 R-PBGA-B96) | — |
| Access Mode | Multi Bank, Page Burst | — |
| Betriebstemperatur | -40C to +95C | -40C to +95C |
| Refresh | Auto / Self Refresh | — |
| Data Mask | Supported (DM function) | — |
| Asynchronous Reset | Supported | Yes (RESET_n) |
| On-Chip Termination | Dynamic ODT | — |
| ZQ Calibration | Supported | Yes |
| Write Leveling | Supported | Yes |
| CRC | Supported | — |
| Supply Voltage Class | DDR4 (1.2 V class) | — |
| RoHS-Status | RoHS Compliant | Compliant |
| REACH Compliance | Compliant | — |
| ECCN | EAR99 | — |
| HTS Code | 8542.32.00.36 | — |
| CAS-Latenz | [DATA_NEEDED: CAS Latency] | — |
| Max Data Rate | [DATA_NEEDED: Max Data Rate] | — |
| Speichergröße | — | 4 Gbit |
| Clock Frequency | — | 1.6 GHz |
| Supply Voltage (VDD) | — | 1.14 V to 1.26 V |
| Technology | — | CMOS |
| Montageart | — | Surface Mount |
| Self Refresh | — | Auto self-refresh |
| Data Mask Function | — | Yes (DM) |
| On-Die Termination | — | Dynamic ODT |
| CRC Function | — | Yes (command/address CRC) |