H5ANAG6NCR-UHC vs H5ANAG6NCJR-XN Vergleich
Detaillierter Direktvergleich von H5ANAG6NCR-UHC von SK hynix und H5ANAG6NCJR-XN von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5ANAG6NCR-UHC | H5ANAG6NCJR-XN |
|---|---|---|
| Marke | SK hynix | SK hynix |
| Kategorie | Mobile LPDDR4 | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $9,20 | $71,20 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Memory Density | 16 Gb (2 GB) | — |
| Speicherorganisation | 1G x 16 | 1G x 16 |
| Schnittstelle | CMOS, Double Data Rate IV | — |
| Gehäuse | FBGA-96 (PBGA-96) | FBGA-96 (96-ball) |
| Die Revision | C | — |
| Speed Grade | [DATA_NEEDED: Speed grade / data rate] | — |
| Supply Voltage (VDD) | [DATA_NEEDED: VDD voltage] | 1.14 V to 1.26 V |
| Betriebstemperatur | [DATA_NEEDED: Operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Configuration | 1 Channel, 1 Rank | — |
| Refresh | [DATA_NEEDED: Refresh scheme] | — |
| Montageart | Surface Mount | Surface Mount (BGA) |
| RoHS-Status | [DATA_NEEDED: RoHS status] | Compliant |
| Factory Packing Quantity | [DATA_NEEDED: Standard packing quantity] | — |
| Application | Main memory, embedded computing, industrial controllers | — |
| Density | — | 16 Gbit (1G x 16) |
| Datenrate | — | 3200 Mbps/pin (DDR4-3200) |
| Package Width | — | 8 mm |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask (DM) | — | Yes |
| Dynamic On-Chip Termination (ODT) | — | Yes |
| ZQ Calibration | — | Yes |
| CRC (Command/Address) | — | Yes |
| Write Leveling | — | Yes |
| Maximum Standby Current | — | 0.074 A (per Vyrian listing) |
| CAS-Latenz | — | [DATA_NEEDED: CAS latency for -XN speed grade] |