H5ANAG6NCR-VKC vs H5ANAG6NCMR-XNI Vergleich
Detaillierter Direktvergleich von H5ANAG6NCR-VKC von SK hynix und H5ANAG6NCMR-XNI von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5ANAG6NCR-VKC | H5ANAG6NCMR-XNI |
|---|---|---|
| Marke | SK hynix | SK hynix |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,00 | $4,95 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM (volatile DRAM) |
| Memory Density | 16 Gbit | — |
| Speicherorganisation | 2G x 8 | — |
| Schnittstelle | DDR4 (Double Data Rate 4) | Parallel (DDR4) |
| Supply Voltage VDD | 1.2 V | — |
| Supply Voltage VDDQ | 1.2 V | — |
| Datenrate | [DATA_NEEDED: verified speed grade in Mbps] | 3200 Mbps (DDR4-3200, XN speed bin) |
| Gehäuse | 96-ball FBGA | FBGA-96 |
| Montageart | Surface Mount | Surface Mount |
| Banks | 16 banks (4 bank groups x 4) | — |
| Burst Length | BL8 | — |
| Refresh Mode | 1x / 2x / 4X per JEDEC DDR4 | — |
| Betriebstemperatur | [DATA_NEEDED: temperature suffix range confirmation] | [DATA_NEEDED: Operating Temperature] |
| Technology | CMOS | CMOS Double Data Rate IV Synchronous DRAM |
| Application | Main memory (PC / server / embedded) | — |
| RoHS-Status | [DATA_NEEDED: RoHS compliance statement] | — |
| Speichergröße | — | 16 Gb |
| Memory Organization | — | 1G x 16 |
| Versorgungsspannung | — | 1.2 V |
| Power Class | — | Normal Power |
| Product Status | — | Active |
| Application Domain | — | Main memory, industrial controllers, computing modules, consumer electronics |
| Memory Format | — | DRAM |
| Speed Bin Family | — | UH/VK/WM/XN |
| VPP Supply Voltage | — | [DATA_NEEDED: VPP Supply Voltage] |
| MSL-Level | — | [DATA_NEEDED: MSL Level] |