H5ANAG8NBJR-RDC vs H5ANAG6NBJR-RDC Vergleich
Detaillierter Direktvergleich von H5ANAG8NBJR-RDC von SK hynix und H5ANAG6NBJR-RDC von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5ANAG8NBJR-RDC | H5ANAG6NBJR-RDC |
|---|---|---|
| Marke | SK hynix | SK hynix |
| Kategorie | DRAM | DRAM |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3,55 | $9,60 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | 16 Gb |
| Speicherorganisation | 2G x 8 | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| I/O Voltage (VDDQ) | 1.2 V | — |
| Schnittstelle | SSTL12 | Synchronous, double data rate |
| Speed Grade (suffix R) | DDR4-2666 class | — |
| Gehäuse | 78-ball FBGA | FBGA (Ball Grid Array), surface mount |
| Montageart | Surface Mount | Surface Mount |
| Refresh | Self-refresh and auto-refresh (8K/64ms class per family datasheet) | — |
| Bank Groups | 4 (per 16Gb DDR4 family datasheet) | — |
| Data Strobe | DQS with read/write training | — |
| Data Bus Inversion | Supported (DBI) | — |
| CAS-Latenz | [DATA_NEEDED: CAS Latency] | — |
| Betriebstemperatur | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: Operating Temperature Range] |
| RoHS-Status | Compliant (lead-free PBGA per family product data) | [DATA_NEEDED: RoHS Status] |
| Lebenszyklusstatus | Active | — |
| Memory Organization | — | 16Gb x16 |
| Datenrate | — | 2666 Mbps (speed grade -RDC) |
| Clocking | — | Fully synchronous to both clock edges |
| Technology | — | CMOS |
| Standard | — | JEDEC DDR4 SDRAM |
| Application | — | Main memory |
| On-Die Termination (ODT) | — | Supported (DDR4 feature) |
| Bank Group Architecture | — | DDR4 bank groups (per JEDEC DDR4) |