H5ANAG8NBJR-RDC vs H5ANAG6NBJR-RDC Comparación
Comparación detallada lado a lado de H5ANAG8NBJR-RDC por SK hynix y H5ANAG6NBJR-RDC por SK hynix. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | H5ANAG8NBJR-RDC | H5ANAG6NBJR-RDC |
|---|---|---|
| Marca | SK hynix | SK hynix |
| Categoría | DRAM | DRAM |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $3,55 | $9,60 |
| Tipo de memoria | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | 16 Gb |
| Organización de memoria | 2G x 8 | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| I/O Voltage (VDDQ) | 1.2 V | — |
| Interfaz | SSTL12 | Synchronous, double data rate |
| Speed Grade (suffix R) | DDR4-2666 class | — |
| Encapsulado | 78-ball FBGA | FBGA (Ball Grid Array), surface mount |
| Tipo de montaje | Surface Mount | Surface Mount |
| Refresh | Self-refresh and auto-refresh (8K/64ms class per family datasheet) | — |
| Bank Groups | 4 (per 16Gb DDR4 family datasheet) | — |
| Data Strobe | DQS with read/write training | — |
| Data Bus Inversion | Supported (DBI) | — |
| Latencia CAS | [DATA_NEEDED: CAS Latency] | — |
| Temperatura de funcionamiento | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: Operating Temperature Range] |
| Estado RoHS | Compliant (lead-free PBGA per family product data) | [DATA_NEEDED: RoHS Status] |
| Estado del ciclo de vida | Active | — |
| Memory Organization | — | 16Gb x16 |
| Velocidad de datos | — | 2666 Mbps (speed grade -RDC) |
| Clocking | — | Fully synchronous to both clock edges |
| Technology | — | CMOS |
| Standard | — | JEDEC DDR4 SDRAM |
| Application | — | Main memory |
| On-Die Termination (ODT) | — | Supported (DDR4 feature) |
| Bank Group Architecture | — | DDR4 bank groups (per JEDEC DDR4) |