IAUA180N04S5N012AUMA1 vs IAUCN04S7N027GATMA1 Vergleich
Detaillierter Direktvergleich von IAUA180N04S5N012AUMA1 von Infineon und IAUCN04S7N027GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUA180N04S5N012AUMA1 - 40V 180A OptiMOS-5 N-MOSFET | Infineon
IAUA180N04S5N012AUMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUA180N04S5N012AUMA1 | IAUCN04S7N027GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,96 | $0,72 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IAUA180N04S5N012AUMA1 | — |
| Series | OptiMOS-5 40 V | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) | 180 A (Tc) | — |
| Maximum Power Dissipation (PD) | 125 W (Tc) | — |
| R_DS(on) (max) | 1.2 mΩ at 10 V VGS | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gehäuse | PG-HSOF-5-2 (sTOLL, MO-319A / HSOF-5), 7x8 mm² | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55 °C to +175 °C (Tj) | [DATA_NEEDED: operating temperature range] |
| Technology | OptiMOS-5 Trench | — |
| Automotive Qualification | AEC-Q101 | — |
| RoHS-Status | Compliant | Compliant |
| Product Family | — | OptiMOS 7 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (Vds max) | — | 40 V |
| Continuous Drain Current (Id) | — | 117 A |
| On-Resistance (Rds(on) max) | — | 2.67 mOhm |
| Power Dissipation (Pd) | — | 70 W (Tc) |
| Gehäuse / Bauform | — | PG-THSOG-4-1 (SSO4G 5x6) |
| Qualification | — | Automotive |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th)] |
| Gate-Source Voltage Max (Vgs) | — | [DATA_NEEDED: Vgs max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg] |
| MSL-Level | — | [DATA_NEEDED: MSL] |
| Substrate Compatibility | — | IMS substrates and legacy FR-4 |