IAUA220N08S5N021AUMA1 vs IQDH29NE2LM5CGSCATMA1 Vergleich
Detaillierter Direktvergleich von IAUA220N08S5N021AUMA1 von Infineon und IQDH29NE2LM5CGSCATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUA220N08S5N021AUMA1 - 80V, 220A OptiMOS-5 N-MOSFET | Infineon
IAUA220N08S5N021AUMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUA220N08S5N021AUMA1 | IQDH29NE2LM5CGSCATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,45 | $1,84 |
| Technology | OptiMOS-5 (75V-120V family) | OptiMOS 5 Power-Transistor |
| Drain-Source Voltage (V_DS max) | 80 V | — |
| Continuous Drain Current (I_D, Tj) | 220 A | — |
| Static Drain-Source On-Resistance (R_DS(on)) | 2.1 mΩ at 10 V V_GS | — |
| Power Dissipation (P_D, Tc) | 211 W | — |
| Gate-Source Voltage (V_GS max) | [DATA_NEEDED: V_GS max absolute rating] | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical/min/max] | — |
| Betriebstemperaturbereich | -55C to +175C (Tj) | — |
| Gehäuse | PG-HSOF-5-4 (7x8 mm²) | PG-WHTFN-9-U02 (WHTFN EP) |
| Montageart | Surface Mount | Surface Mount |
| Channel Type | N-Channel | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| MSL-Level | [DATA_NEEDED: MSL moisture sensitivity level] | [DATA_NEEDED: MSL rating] |
| RoHS-Status | Compliant | Compliant |
| Total Gate Charge (Q_g) | [DATA_NEEDED: Q_g typical at V_GS=10V] | — |
| Output Capacitance (C_oss) | [DATA_NEEDED: C_oss typical] | — |
| Thermal Resistance (R_thJC) | [DATA_NEEDED: junction-to-case thermal resistance] | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 25 V |
| Continuous Drain Current (Ta) | — | 75 A |
| Continuous Drain Current (Tc) | — | 789 A |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 278 W |
| Maximum On-Resistance RDS(on) | — | 0.29 mΩ |
| Gate Threshold Voltage VGS(th) | — | 2 V (typ) |
| Pin-Anzahl | — | 9 |
| Cooling | — | Dual-side exposed pad (top + bottom) |