IAUA220N08S5N021AUMA1 vs IQDH29NE2LM5CGSCATMA1 对比

详细并排对比 IAUA220N08S5N021AUMA1 出自 Infineon 和 IQDH29NE2LM5CGSCATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUA220N08S5N021AUMA1 IAUA220N08S5N021AUMA1 - 80V, 220A OptiMOS-5 N-MOSFET | Infineon

IAUA220N08S5N021AUMA1 - 80V, 220A OptiMOS-5 N-MOSFET | Infineon

IAUA220N08S5N021AUMA1 ✓ 量产中
Infineon
IQDH29NE2LM5CGSCATMA1 IQDH29NE2LM5CGSCATMA1 - 25V N-Ch 0.29mΩ MOSFET | Infineon

IQDH29NE2LM5CGSCATMA1 - 25V N-Ch 0.29mΩ MOSFET | Infineon

IQDH29NE2LM5CGSCATMA1 ✓ 量产中

规格对比

参数 IAUA220N08S5N021AUMA1 IQDH29NE2LM5CGSCATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.45 $1.84
Technology OptiMOS-5 (75V-120V family) OptiMOS 5 Power-Transistor
Drain-Source Voltage (V_DS max) 80 V —
Continuous Drain Current (I_D, Tj) 220 A —
Static Drain-Source On-Resistance (R_DS(on)) 2.1 mΩ at 10 V V_GS —
Power Dissipation (P_D, Tc) 211 W —
Gate-Source Voltage (V_GS max) [DATA_NEEDED: V_GS max absolute rating] —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical/min/max] —
工作温度范围 -55C to +175C (Tj) —
封装 PG-HSOF-5-4 (7x8 mm²) PG-WHTFN-9-U02 (WHTFN EP)
安装类型 Surface Mount Surface Mount
Channel Type N-Channel —
Automotive Qualification AEC-Q101 qualified —
MSL 等级 [DATA_NEEDED: MSL moisture sensitivity level] [DATA_NEEDED: MSL rating]
RoHS 状态 Compliant Compliant
Total Gate Charge (Q_g) [DATA_NEEDED: Q_g typical at V_GS=10V] —
Output Capacitance (C_oss) [DATA_NEEDED: C_oss typical] —
Thermal Resistance (R_thJC) [DATA_NEEDED: junction-to-case thermal resistance] —
FET Type — N-Channel
Drain-Source Voltage (VDS) — 25 V
Continuous Drain Current (Ta) — 75 A
Continuous Drain Current (Tc) — 789 A
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 278 W
Maximum On-Resistance RDS(on) — 0.29 mΩ
Gate Threshold Voltage VGS(th) — 2 V (typ)
引脚数量 — 9
Cooling — Dual-side exposed pad (top + bottom)

数据手册与资源

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