IAUC100N04S6N015ATMA1 vs IAUCN04S7N006ATMA1 Vergleich
Detaillierter Direktvergleich von IAUC100N04S6N015ATMA1 von Infineon und IAUCN04S7N006ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUCN04S7N006ATMA1 - 40V 175A OptiMOS N-Channel MOSFET | Infineon
IAUCN04S7N006ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUC100N04S6N015ATMA1 | IAUCN04S7N006ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,78 | $0,95 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS-6 40V | — |
| Technology | N-Channel Trench MOSFET | OptiMOS 5 (trench) |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D @ T_C=25C) | 100 A | — |
| Power Dissipation (P_D @ T_C=25C) | 100 W | — |
| R_DS(on) max @ V_GS=10V | 1.5 mΩ (typical, per Infineon product page) | — |
| Gate-Source Voltage (V_GS) max | ±20 V | — |
| Betriebstemperaturbereich | -55 C to +175 C (junction, typical) | -55 C to +175 C |
| Gehäuse | PG-TDSON-8 (SSO8) 5x6 mm | PG-TDSON-8-43 |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 (unlimited floor life) | [DATA_NEEDED: MSL rating] |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| RoHS Compliance | Compliant | — |
| Lead-Free | Yes | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) | — | 175 A |
| On-State Resistance (RDS(on)) | — | 0.63 mOhm (typ at VGS = 10 V) |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS max rating] |
| Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Junction Temperature Max | — | 175 C |
| Power Dissipation Max (Pd) | — | [DATA_NEEDED: Pd max] |
| Gate Charge Total (Qg) | — | [DATA_NEEDED: Qg total] |
| Lead-Free / RoHS | — | Yes (compliant) |