IAUC100N04S6N015ATMA1 vs IAUCN10S7L290TATMA1 Vergleich
Detaillierter Direktvergleich von IAUC100N04S6N015ATMA1 von Infineon und IAUCN10S7L290TATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7L290TATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUC100N04S6N015ATMA1 | IAUCN10S7L290TATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,78 | $0,36 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-6 40V | OptiMOS™ 7 |
| Technology | N-Channel Trench MOSFET | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D @ T_C=25C) | 100 A | — |
| Power Dissipation (P_D @ T_C=25C) | 100 W | — |
| R_DS(on) max @ V_GS=10V | 1.5 mΩ (typical, per Infineon product page) | — |
| Gate-Source Voltage (V_GS) max | ±20 V | — |
| Betriebstemperaturbereich | -55 C to +175 C (junction, typical) | — |
| Gehäuse | PG-TDSON-8 (SSO8) 5x6 mm | PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 (unlimited floor life) | 1 (per JEDEC J-STD-020) |
| Automotive Qualification | AEC-Q101 | AEC-Q100 qualified |
| RoHS Compliance | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at TC=25°C | — | 27 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulse rating] |
| On-Resistance RDS(on) max @ VGS=10V | — | 28.6 mΩ |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) at TC=25°C | — | 45 W |
| Betriebs-Sperrschichttemperatur | — | -55 °C to +175 °C |
| Avalanche Rated | — | Yes |
| ESD Protection | — | HBM Class 1C (per Infineon datasheet) |