IAUC100N04S6N015ATMA1 vs IAUCN10S7L290TATMA1 Сравнение
Подробное сравнение бок о бок IAUC100N04S6N015ATMA1 от Infineon и IAUCN10S7L290TATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IAUC100N04S6N015ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon
IAUC100N04S6N015ATMA1 ✓ АктивенInfineon
IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7L290TATMA1 ✓ АктивенСравнение характеристик
| Параметр | IAUC100N04S6N015ATMA1 | IAUCN10S7L290TATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,78 | $0,36 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-6 40V | OptiMOS™ 7 |
| Technology | N-Channel Trench MOSFET | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D @ T_C=25C) | 100 A | — |
| Power Dissipation (P_D @ T_C=25C) | 100 W | — |
| R_DS(on) max @ V_GS=10V | 1.5 mΩ (typical, per Infineon product page) | — |
| Gate-Source Voltage (V_GS) max | ±20 V | — |
| Диапазон рабочих температур | -55 C to +175 C (junction, typical) | — |
| Корпус | PG-TDSON-8 (SSO8) 5x6 mm | PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled |
| Тип монтажа | Surface Mount | Surface Mount |
| Уровень MSL | 1 (unlimited floor life) | 1 (per JEDEC J-STD-020) |
| Automotive Qualification | AEC-Q101 | AEC-Q100 qualified |
| RoHS Compliance | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Тип транзистора | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at TC=25°C | — | 27 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulse rating] |
| On-Resistance RDS(on) max @ VGS=10V | — | 28.6 mΩ |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) at TC=25°C | — | 45 W |
| Рабочая температура перехода | — | -55 °C to +175 °C |
| Avalanche Rated | — | Yes |
| ESD Protection | — | HBM Class 1C (per Infineon datasheet) |