IAUC100N04S6N028ATMA1 vs IAUC100N04S6N015ATMA1 Vergleich
Detaillierter Direktvergleich von IAUC100N04S6N028ATMA1 von Infineon und IAUC100N04S6N015ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6N028ATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | IAUC100N04S6N028ATMA1 | IAUC100N04S6N015ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,42 | $0,78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 40V | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | N-Channel Trench MOSFET |
| Drain-Source Voltage (V_DS) | 40 V | 40 V |
| Continuous Drain Current (I_D) at T_C=25°C | 100 A | — |
| Pulsed Drain Current (I_DM) | 400 A | — |
| R_DS(on) max @ V_GS=10V | 2.8 mΩ (typical) | 1.5 mΩ (typical, per Infineon product page) |
| Gate Threshold Voltage (V_GS(th)) | 1.5 V to 2.5 V | — |
| Total Gate Charge (Q_g) | [DATA_NEEDED: Q_g in nC] | — |
| Power Dissipation (P_D) at T_C=25°C | 62 W | — |
| Betriebstemperaturbereich | -55 °C to +175 °C | -55 C to +175 C (junction, typical) |
| Gehäuse | PG-TDSON-8 (TDSON-8) | PG-TDSON-8 (SSO8) 5x6 mm |
| Montageart | Surface Mount | Surface Mount |
| Automotive Qualified | Yes | — |
| RoHS-Status | Compliant | — |
| Product Family | — | OptiMOS-6 40V |
| Continuous Drain Current (I_D @ T_C=25C) | — | 100 A |
| Power Dissipation (P_D @ T_C=25C) | — | 100 W |
| Gate-Source Voltage (V_GS) max | — | ±20 V |
| MSL-Level | — | 1 (unlimited floor life) |
| Automotive Qualification | — | AEC-Q101 |
| RoHS Compliance | — | Compliant |
| Lead-Free | — | Yes |